Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances

Abstract

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P + layer, having a wide bandgap from 1 to l.12 eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1 m of P + layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P + layers on the electric parameters of this new structure. We show that only the short-circuit current density (J SC ) and efficiency are improved, reaching respectively 34.68 mA/cm 2 and 18.85%, with increasing of the acceptors density. Finally, we introduced 10 nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

“…R s of the solar cell mainly results from the circuit terminal and right‐hand and left‐hand side metal contacts. [ 88 ] On the other hand, R sh appears to be due to the reverse saturation current. In this simulation study, the influences of R s and R sh are examined using the SCAPS‐1D simulator to analyze the photovoltaic performance of the proposed Sb 2 Se 3 ‐based solar cell.…”

Computational analysis of mixed cation mixed halide-based perovskite solar cell using SCAPS-1D software

“…Fig. 5 .c shows that increasing perovskite layer thickness induces a decline of FF from 88.14% to 81.74%, this is explained by the relation between FF and (equation (11) ( Guirdjebaye et al, 2019 ); thus, the increase in the recombination rate and series resistance with this thickness induces a decrease in the FF . Where …”

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

“… 7 Thus, for values of k ranging from 0 to 1, E g evolves between 1.02 and 1.68 eV and χ e varies from 4.35 to 3.68 eV. 8 , 9 …”

“…CIGS alloy is a chalcopyrite semiconductor material presenting a direct-gap property with a high absorption coefficient of around 10 5 cm –1 in the visible range. , Its parameters such as band gap ( E g ) and electron affinity (χ e ) are tunable as a dependency of relative Ga content k = [Ga]/([Ga] + [In]) . Thus, for values of k ranging from 0 to 1, E g evolves between 1.02 and 1.68 eV and χ e varies from 4.35 to 3.68 eV. , …”