Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

Abstract

The incorporation coefficients of As2 and As4, obtained from reflection high-energy electron diffraction intensity oscillations in the As-limited growth regime, are compared for the growth of GaAs on (001), (110), and (111)A surfaces by molecular beam epitaxy. The kinetic results are remarkably similar for (110) and (111)A, but very different from those obtained on (001). The incorporation coefficients decrease with increasing temperature for all three surfaces, with the effect being much more dramatic on (110) and (111) A. The low- and temperature-dependent incorporation coefficients on (110) and (111)A explain the need for high As:Ga flux ratios and low substrate temperatures in the preparation of high-quality GaAs epitaxial layers.

Spin lifetime of (In,Ga)As/GaAs (110) quantum wells

“…Due to a lower incorporation coefficient of As 4 on GaAs(110) compared to GaAs(001) [17], a lower substrate temperature G T (470-500 °C [18,19]), lower growth rates and a higher As 4 vapor overpressure (V-to-III beam-equivalent pressure (BEP) ratio 20-30 [18] or even 70 [20]) are essential. The optimum MBE (110) growth conditions are in a narrow parameter space.…”

(In,Ga)As/GaAs quantum wells on GaAs(110)

“…The missing surface reconstruction [2] disables the precise in-situ control of growth parameters by reflection high-energy electron diffraction. The use of GaAs(110) substrates requires growth at a lower temperature, a lower rate and a higher V-to-III flux ratio [3][4][5] compared to GaAs(001). Under these conditions surface facetting is minimized [6].…”

Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

“…The surface is highly disordered and has a high density of island edge sites. For (0 0 1) surfaces, g V increases weakly with temperature under typical growth conditions [30], presumably as more Group V species desorb prior to incorporation. On the other hand, s V relates to the replacement of Group V atoms that desorb from sites of the prevailing surface reconstruction and increases strongly with temperature ( Figs.…”