MRS Proc. 2000 DOI: 10.1557/proc-610-b6.10 View full text
Petra Feichtinger, Ben Poust, Hiroaki Fukuto, Rajinder Sandhu, Mark S. Goorsky, Dwain Oster, Steve F. Rickborn, Jim Moreland

Abstract: AbstractWe studied damage evolution and the influence on defect interactions as a function of Si self implantation dose in p/p+ silicon wafers. Highly boron doped 150 mm diameter silicon substrate wafers with a 2.5 μm thick nominally un-doped epitaxial layer (p/p+) were employed. Due to the misfit strain, misfit dislocations formed during the epitaxial growth process around the wafer edges. This localized dislocation distribution was utilized to study the role of the implant on both the nucleation and growth o…

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