2000
DOI: 10.1557/proc-610-b6.10 View full text |Buy / Rent full text
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Abstract: We studied damage evolution and the influence on defect interactions as a function of Si self implantation dose in p/p+ silicon wafers. Highly boron doped 150 mm diameter silicon substrate wafers with a 2.5 μm thick nominally un-doped epitaxial layer (p/p+) were employed. Due to the misfit strain, misfit dislocations formed during the epitaxial growth process around the wafer edges. This localized dislocation distribution was utilized to study the role of the implant on both the nucleation and growth of the mi… Show more

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