Ion Beam Etching

Puckett, P. Reese; Michel, Stephen L.; Hughes, William E.

doi:10.1016/b978-0-08-052421-4.50019-8

Cited by 6 publications

(4 citation statements)

References 22 publications

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“…Neutral ion beam etching (or physical sputtering) is a versatile and accurate micro-structuring technique that has been successfully employed on a wide variety of materials [28] and has been demonstrated to be suitable for producing low-loss channel waveguide lasers on other films [29]. The attractive feature of ion beam etching is that a high degree of control can be achieved.…”

Section: Channel-waveguide Fabricationmentioning

confidence: 99%

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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Abstract-We report the first fabrication and laser operation of channel waveguides based on LaF 3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first involves ion milling and the second takes the novel approach of using a photo-definable polymer overlay. Laser operation in Nd-doped samples is demonstrated at 1.06, 1.05, and 1.3 m, and the potential for mid-infrared laser sources based on such guides is discussed.

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Section: Channel-waveguide Fabricationmentioning

confidence: 99%

Low phonon energy, Nd:LaF/sub 3/ channel waveguide lasers fabricated by molecular beam epitaxy

Bhutta

Chardon

Shepherd

et al. 2001

IEEE J. Quantum Electron.

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“…When no transfer takes place, the sidewall angle (α) of the palladium electrodes can be adjusted between 0° to 30° (see Figure 4), as this angle corresponds to the tilt with the maximum sputter yield. A slight broadening of the lines occurs due to an initial crown formation [18]. If the etching is terminated exactly when the facet reaches the Pd interface no residual crowns are observed after stripping the HSQ.…”

Section: Resultsmentioning

confidence: 99%

“…With decreasing voltage the maximum sputter yield shifts to lower tilting angles, although a significant change can only be observed at very low energies. [16][17][18] Therefore, when a HSQ line is being ion etched and the corners are not perfectly rectangular, which is in effect always the case, a facet develops very quickly. This facet is therefore finally dominating the resist edge shape (see Figure 2).…”

Section: Resultsmentioning

confidence: 99%

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Fabrication of high-resolution, self-aligned palladium electrodes

Jenni

Weichart

Muoth

et al. 2016

Microelectronic Engineering

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Here, a fabrication approach is presented, which allows for the patterning of vertically displaced, high density and high resolution palladium electrodes in a single processing step. A top down method, namely ion milling, was used to transfer the e-beam lithography pattern into the palladium. Hereby hydrogen silsesquioxane (HSQ) was used as a hard mask. Other than the conventionally used lift-off based approach, this method does not restrict the line height to spacing ratio and therefore permits the fabrication of very densely spaced electrodes. Specifically, electrodes with as little as 25 nm spacing were obtained, although only lines with spacings of 80 nm or more were electrically isolated without any further processing. By adjusting the tilting angle and the HSQ to Pd thickness the cross-sectional profile can be controlled and varied from triangular (30° side-wall slope at 10° tilt) to rectangular (30° tilt). This can be used to its advantage in order to reduce the parasitic capacitance of adjacent lines for a given pitch. Additionally, a proximity effect was observed as the decrease of spacing of electrodes was correlated with an increase in side-wall verticality. In summary, we have demonstrated a robust process to pattern perfectly aligned electrodes on complex topographical substrates. The here presented method is characterized by a high degree of scalability and also high flexibility in terms of materials selection.

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