Abstract:Integration of new channel materials in current semiconductor manufacturing scheme would represent a leap advance in CMOS technology. Processing of new channel materials (III-V's, Ge and SiGe) via dry etch poses significant challenges. Dry (plasma) etch can be used to pattern channel materials after they are deposited using an epitaxial process; alternatively channels maybe inserted into bounded (for example an oxide) recesses (for example silicon) fabricated using etch technologies already developed for FinFE… Show more
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