Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics

Interface characterization of atomic layer deposited high-k on non-polar GaN

“…34 Additionally, we cannot rule out the impacts of Ga native oxide regrowth at the interface and the metal dangling bonds close to the conduction band on the increase in interface states. Contrary to our observation, a reduction of D it was observed at the sputtered HfO 2 /c-plane GaN interface 46 and HfO 2 /Si with the interfacial layer 47 after N 2 annealing. The degree of reduction depends on the annealing atmosphere and temperature.…”

Effect of oxidation temperature on physical properties of thermally grown oxide on GaN in N2O ambient

“…Therefore, numerous materials have been studied as the gate insulator in GaN-based MOS devices. These include SiO 2 [12,13], Si 3 N 4 [14], Ga 2 O 3 [1,4,9,15e26], Al 2 O 3 [27,28], MgO [29,30], Sc 2 O 3 [31,32], Ta 2 O 5 [33], CeO 2 [34e38], HfO 2 [2,39] [32,40,43], SiN [44], Pb(Zr,Ti)O 3 [45], SiO 2 /Si 3 N 4 /SiO 2 [46] and organic poly p-phenylenebenzobisthiazole [47].…”

Influence of the misorientation of 6H–SiC substrate on the quality of GaN epilayer grown by MOVPE

“…In recent years, nitride semiconductors have been considered as the most promising materials for optoelectronic and high power electronic devices in general lighting and microwave applications [1][2][3][4][5][6][7]. Due to the lack of affordable large area GaN substrates, sapphire (Al 2 O 3 ) [8,9], silicon carbide (SiC) [10,11] and other foreign substrates [12][13][14] are widely used for nitrides epitaxy growth.…”