Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics

Tahamtan, S.; Goodarzi, A.; Abbasi, Seyed Peyman; Hodaei, A.; Zabihi, Majed; Sabbaghzadeh, J.

doi:10.1016/j.microrel.2011.03.039

Cited by 8 publications

(5 citation statements)

References 18 publications

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“…The variation of contact resistivity with alloy temperature for AuGe/Ni/Au was found to depend on the presence of these pittings. [24] Small dense pittings produce a lower contact resistivity, while big sparse pittings produce a higher contact resistivity. Thus, ρ c decreases with increasing the annealing temperature from 460 • C to 490 • C, then it increases with increasing the annealing temperature to 550 • C. Annealing time is another parameter in the annealing process that affects the contact resistivity.…”

Section: Resultsmentioning

confidence: 99%

“…Because Ti and Ge atoms are both chemisorbed on graphene and the effective contact area varies with the post-annealing temperature. [19,[23][24][25] The work function of Ti (4.35 eV) is lower than that of graphene (4.5 eV), thus charge transfer occurs between the Ti and graphene to align the Fermi levels. This results in n-type doping of the graphene.…”

Section: Resultsmentioning

confidence: 99%

“…As Ni 3 Ge is firstly alloyed after annealing at low temperature, upon heating, Ni and Ge are outdiffused from Ni 3 Ge. [24] Thus, more GeC strong bonding which leads to low ρ c can form with increasing annealing temperature. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Also increasing the annealing time can coarsen the pittings. [24] The reasons mentioned above can all lead to an increase in contact resistivity with long annealing time. Here the optimized annealing time for the AuGe/Ni/Au-graphene contact is 60 s.…”

Section: Resultsmentioning

confidence: 99%

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Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Song

Dong

et al. 2016

Chinese Phys. B

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Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au 0.88 Ge 0.12 /Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre-and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5 × 10 −4 to 7.8 × 10 −5 Ω•cm 2 by pre-annealing at 300 • C for one hour, and continues to decrease to 9.5 × 10 −7 Ω•cm 2 after post-annealing at 490 • C for 60 seconds. These approaches provide reliable means of lowering contact resistance.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Song

Dong

et al. 2016

Chinese Phys. B

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“…While GaAs-based LDs tend to have high emission power and high efficiencies, the series resistance associated with the ohmic contact still limits their performance to a certain extent (Tahamtan et al , 2011; Zediker et al , 2017; Ladugin et al , 2017). In addition, the series resistance not only affects the operating voltages of the LD devices but also their optical output power, conversion efficiency and thermal stability (Tahamtan et al , 2011). In a word, an optimized ohmic contact can not only reduce the series resistance, improve the optical output power and optoelectrical conversion efficiency of the laser but also improve its stability and reliability.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic characterization of laser diodes with different electrode structures

Lin

Zhao

et al. 2022

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Purpose This paper aims to improve the device performance from the perspective of reducing ohmic contact resistance; the effects of different electrode structures and alloying parameters on the series resistance and power-current-voltage of laser diodes (LDs) have been investigated in this paper. Design/methodology/approach Four groups of p-GaAs side metal electrodes with different metal layer arrangements and thicknesses are fabricated for the investigated LDs. The investigated p-GaAs side electrodes are based on Ti/Pt/Au material and the n-GaAs side metal electrodes all have a same structure of Ni/Ge/Ni/Au/Ti/Pt/Au. The LDs with different electrodes were alloyed at 380°C for 60 s and 420°C for 80 s. Findings The experimental results show that the series resistance decreases by 14%–20%, the output power increases by 2%–2.2% and the conversion efficiency increases by 1.69%–2.16% for the LDs prepared with optimized alloying parameters (420°C for 80 s). The laser diode with p-GaAs side Ti/Pt/Au electrode of 30/70/100 nm has the best device characteristics under both annealing conditions. Originality/value The utilization of this improvement on ohmic contact property in electrode is not only very important for upgrading high-power LDs but also helpful for GaAs-based microelectronic devices such as HBT and monolithic microwave integrated circuit.

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Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Yang

Jung

Lee

et al. 2014

Materials Research Bulletin

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Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics

Cited by 8 publications

References 18 publications

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Optoelectronic characterization of laser diodes with different electrode structures

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

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