Investigation on improved performance of Erbium doped TiO2 nanowire based UV detector

Diameter dependence of the UV light detecting performance of InGaN/GaN nanorods array photodetector

“…The response time τ r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time τ d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/recovery speed of the photocurrent is fast enough for the application. It was worth noting that the detector fabricated in this work exhibited better detecting performance compared to references, such as single InGaN/GaN QWs nanowire, ZnO nanowire array, TiO 2 nanowire array, GaN nanowire array, GaN/ZnO nanorods and core/shell InGaN/GaN QWs nanowire array [20–26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20–26].…”

“…It can be seen that the photocurrent can be rapidly and consistently switched between 'Off' and 'On' states at 0.5 V bias. The response time t r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time t d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/ [20][21][22][23][24][25][26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20][21][22][23][24][25][26].…”

“…The response time t r is defined as the rising time from 0 to 90% of maximum photocurrent that <0.2 s (beyond the resolution of the instrument), and the decay time t d , which defined as falling time from 100 to 10% of maximum photocurrent that measured as 0.4 s. It indicated that the response/ [20][21][22][23][24][25][26]. As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20][21][22][23][24][25][26]. In addition, the InGaN/GaN nanorods array photodetector could detect UV light with faster response/recover time than ZnO nanowire array, TiO 2 nanowire array and single InGaN/GaN QWs nanowire [23][24][25][26].…”

“…As shown in Table 1, the responsivity of the InGaN/GaN nanorods array photodetector was found higher than in [20][21][22][23][24][25][26]. In addition, the InGaN/GaN nanorods array photodetector could detect UV light with faster response/recover time than ZnO nanowire array, TiO 2 nanowire array and single InGaN/GaN QWs nanowire [23][24][25][26]. Nonetheless, the response speed of the device is needed to further improve in the next in order to achieve an instantaneous response.…”

Ultraviolet detection by Cr doped In 2 O 3 TF

“…7. It was observed that the device is extremely sensitive under UV light (wavelength = 320 nm) excitation than visible illumination (wavelength = 680 nm) at an applied bias voltage of −2 V with rising time = 0.138 s and fall time = 0.132 s. Therefore, such Au/Cr:In 2 O 3 /p-Si structure-based photodetector can be used as an effective UV detector as the relatively simple device structures are also desirable for optoelectronic switches and optical communications [20][21][22][23][24].…”