Investigation of the novel 4H SiC trench MOSFET with non-uniform doping floating islands

Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode

“…The should be typically <4 MV/cm when the device is in the blocking mode [2]. There have been efforts to address this problem by introducing novel designs such as L‐shaped gate [3], shielded fin‐shaped gate [4], non‐uniform doping floating islands [5], dual shielding region at the trench bottom [6], and so on. Although trench MOSFETs have relatively low compared to the planar device due to the absence of JFET region, the resistance due to drift region of the device is almost the same.…”

Improved oxide field and switching performance obtained in a CoolSiCTM trench MOSFET by incorporating the superjunction concept

“…An L-shaped gate (LSG) surrounding the bottom corner of the trench was found to be another way of significantly reducing the peak electric field [13]. Without modifying the basic SiC UMOSFET structure, having a gaussian doping profile within the depletion region also helped in suppressing the electric field crowding at the trench corner [14]. Most of the studies reported have not considered the effect of temperature and stray inductance on device characteristics.…”