Investigation of the gapless state in bismuth-antimony alloys

Brandt, N. B.; Ponomarev, Ya. G.; Chudinov, S. M.

doi:10.1007/bf00653870

Cited by 34 publications

(32 citation statements)

References 32 publications

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“…12 It is expected that LMR < TMR for B > B c (d) for wires in which electronic transport is ballistic because at high magnetic fields, the carriers avoid collision with the walls when the magnetic field is oriented along the wire direction. As is demonstrated with the LMR and TMR of sample IV (Fig.…”

mentioning

confidence: 99%

Confinement effects and surface-induced charge carriers in Bi quantum wires

Huber

Nikolaeva

Konopko

et al. 2004

Applied Physics Letters

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We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires. For 80-nm wires, the hole concentration is less than 30% of that for bulk Bi, a finding that is consistent with current models of quantum confinement effects. However, 30-nm-diameter nanowires, which are predicted to be semiconductors, show a nearly isotropic short period of 0.025 T -1 , consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-tosemiconductor transition.

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mentioning

confidence: 99%

Confinement effects and surface-induced charge carriers in Bi quantum wires

Huber

Nikolaeva

Konopko

et al. 2004

Applied Physics Letters

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“…Стрелки указывают на значения поля, где проявляются переходы полупроводник-полуметалл. сильных полях носители заряда находились в УКП и при B ∼ 8.5 Тл наблюдался максимум ρ/ρ, связанный [7][8][9] с переходом полупроводник-полуметалл (см. рис.…”

Section: результаты исследования и их обсуждениеunclassified

“…Известно, что гальваномагнитные явления весь-ма привлекательны для изучения характеристик но-сителей заряда в ультраквантовых магнитных по-лях для индуцирования электронных фазовых пере-ходов типа полупроводник-полуметалл, полуметалл-полупроводник [7][8][9] и т. п.…”

Section: Introductionunclassified

Особенности гальваномагнитных явлений в сильных магнитных полях в бикристаллах кручения 3D топологического изолятора Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0.07≤ x≤ 0.2)

Мунтяну¹,

Georgitse²,

Gilewski³

et al. 2017

Физика И Техника Полупроводников

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Исследованы гальваномагнитные явления в бикристаллах кручения сплавов Bi 1−x Sbx (0.07 ≤ x ≤ 0.2) при низких температурах и в магнитных полях до 40 Тл. Установлено, что при малых углах разориентации кристаллитов переход полупроводник-полуметалл индуцируется в центральном (толщина ∼ 60 нм) и двух смежных слоях (толщина ∼ 20 нм каждый) интерфейса при разных значениях ультраквантового магнитного поля. В бикристаллах с большими углами разориентации в сильных магнитных полях наблюдались квантовые осцилляции магнитосопротивления и эффекта Холла, которые свидетельствуют о том, что плотность электронных состояний выше, а носители заряда тяжелее в смежных слоях интерфейсах, чем в кристаллитах. Наши результаты показывают также, что в бикристаллах кручения существуют области разной плотности квантовых электронных состояний, зависящие от угла разориентации кристаллитов и напряженности магнитного поля.

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“…As a result, the system exhibits magnetic moment oscillations having a universal flux period / hc e . The flux quantization effect in normal simply-connected cylindrical conductors was detected experimentally by Brandt, Gitsu, Nikolaeva, and Ponomarev [12,20,21] who investigated longitudinal magnetoresistance of pure Bi single crystals. That was the first observation of the interference effect of flux quantization in nonsuperconducting condensed matter.…”

Section: Introduction Flux Quantization In Normal Metalsmentioning

confidence: 97%

“…One of them displays an intricate dependence on the magnetic field and the harmonic number and is related to the electrons in the central cross-section of the Fermi surface. These are actually aperiodic oscillations having no universal period, their «period» being dependent on the on the law of quasiparticle dispersion [12]. The other component has a universal flux period / hc e .…”

Section: Introduction Flux Quantization In Normal Metalsmentioning

confidence: 99%

Coherent quantum phenomena in mesoscopic metallic conductors (Review Article)

Gogadze

2010

Low Temperature Physics

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The quantum coherent phenomena in mesoscopic cylindrical metallic conductors have been considered. Pure double-and single-connected normal samples were placed in a longitudinal magnetic field, which generated interference phenomena depending on the magnetic flux through the cross-section of the conductor. The period of the induced oscillations is equal to the flux quantum hc/e of the normal metal. The quantum states are formed in the structures by collisions of the electrons with the dielectric boundary of the sample. The magnetic flux is included in the expression for the spectrum of quasiparticles. The proximity effect and its influence on the modification of the spectrum of quantum coherent phenomena have been investigated. The behavior of cylindrical samples consisting of a superconducting (S) metal with a deposited thin pure normal (N) metal layer has been analyzed. In this structure the electrons are localized in a well bounded by a dielectric on one side and by a superconductor on the other. The specific feature of the generated quantized Andreev levels is that in the varying field H (or temperature T) each of the levels in the well can coincide periodically with the chemical potential of the metal. As a result, the state of the system experiences strong degeneracy and the density of states exhibits resonance spikes of the energy of the NS sample. This makes a significant contribution to the magnetic moment. A theory of the reentrant effect for NS structures has been developed, which interprets the anomalous behavior of the magnetic susceptibility of such structures as a function of the magnetic field and temperatures.

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Investigation of the gapless state in bismuth-antimony alloys

Cited by 34 publications

References 32 publications

Confinement effects and surface-induced charge carriers in Bi quantum wires

Confinement effects and surface-induced charge carriers in Bi quantum wires

Особенности гальваномагнитных явлений в сильных магнитных полях в бикристаллах кручения 3D топологического изолятора Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0.07≤ x≤ 0.2)

Coherent quantum phenomena in mesoscopic metallic conductors (Review Article)

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Investigation of the gapless state in bismuth-antimony alloys

Cited by 34 publications

References 32 publications

Confinement effects and surface-induced charge carriers in Bi quantum wires

Confinement effects and surface-induced charge carriers in Bi quantum wires

Особенности гальваномагнитных явлений в сильных магнитных полях в бикристаллах кручения 3D топологического изолятора Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0.07&le; x&le; 0.2)

Coherent quantum phenomena in mesoscopic metallic conductors (Review Article)

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Особенности гальваномагнитных явлений в сильных магнитных полях в бикристаллах кручения 3D топологического изолятора Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0.07≤ x≤ 0.2)