The defect carriers in most dielectric capacitors always
reduce
the breakdown electric field and polarization, thereby limiting the
improvement of energy storage performances. This work proposes a strategy
of donor doping in P-type leakage conductance relaxor ferroelectric
films to depress the oxygen vacancies, with Fe3+ substituting
for Mg2+ in SrBi4LaMg0.5Ti4.5O18 film capacitors. It is shown that the introduction
of Fe3+ effectively inhibits the generation of oxygen vacancy,
and the decrease of the oxygen vacancy concentration reduces the p-type
leakage conductance and thus increases the breakdown strength of the
film capacitors. The reduction of oxygen vacancy also weakens the
limitation of the domain wall pinning effect on the polarization of
the materials. This regulation effectively breaks through the unfavorable
coupling between the breakdown electric field and polarization. An
optimum energy storage density of 116.7 J/cm3 and energy
efficiency of 74% were obtained in SrBi4LaMg0.5–x
Ti4.5O18:xFe films. This work provides an important alternative to regulate
the oxygen vacancy generation and improve the energy storage performances
of dielectric film capacitors.