2009
DOI: 10.4028/www.scientific.net/kem.416.306 View full text |Buy / Rent full text
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Abstract: Based on reciprocating electroplated diamond wire saw slicing single crystal silicon experiments, a bonded interface sectioning technique was used to measure the silicon subsurface damage (SSD) depth, and the influences of wire saw speed and feed speed on silicon SSD were studied. Moreover, based on the indentation fracture mechanics (IFM) theory, a theoretical model of relationship between SSD and surface roughness (SR) was established for predicting the SSD depth by measuring the SR. The results indicate tha… Show more

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