Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

Lü, Yuan; Liu, Xianglin; Lu, Dongzhu; Yuan, Huatang; Chen, Zhen; Fan, T. W.; Li, Yufeng; Han, Peng; Wang, Xiaohui; Du, Wei; Wang, Zhanguo

doi:10.1016/s0022-0248(01)02163-7

Cited by 23 publications

(13 citation statements)

References 14 publications

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“…But in our study, it was found that the crystal quality of GaN epilayers strongly depends on the growth temperature of the high-temperature (HT) AlN buffer, and the window range of the AlN buffer's growth temperature is as narrow as several tens of degrees. Our different results compared with those of Zamir et al may root in our technique of pre-covering Al on Si substrate before growing the AlN buffer layer [3]. In applying the technique of pre-covering Al, Si substrate is exposed to a trimethylaluminium (TMAl) flow for several minutes in order to deposit an ultrathin layer of liquid Al.…”

Section: Introductionmentioning

confidence: 79%

“…Pre-covering Al on the Si surface suppressed the formation of the amorphous Si x N y layer. Details of MOCVD growth of the HT-AlN buffer on Si(1 1 1) have been described previously [3,12].…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, it is really difficult to grow GaN on Si substrate. In the past decade, various types of buffer layers such as 3C-SiC [1], AlN [2,3], GaAs [4], AlAs [5], Si 3 N 4 [6], and g-Al 2 O 3 [7] have been used as the intermediate layer between the GaN epilayer and the Si substrate. Since AlN has good wetting properties on Si substrate, the recent experimental results have concluded that an AlN buffer layer can alleviate the difficulties of GaN growth on Si substrate compared with other intermediate layers.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Lü

Liu

Wang

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 79%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Lü

Liu

Wang

et al. 2004

Journal of Crystal Growth

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“…The structure is typical for well controlled GaN growth on foreign substrates using AlN nucleation layer. First amorphous SiN layer, resulting from the initial nitridation of Si (111) surface [16], is obtained. The degree of the crystallinity and the thickness and structure of the layer depends on the technical parameters of the initial stage of the growth.…”

Section: Resultsmentioning

confidence: 99%

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Borysiuk¹,

Caban

Strupiński

et al. 2007

Cryst. Res. Technol.

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GaN nano-ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100-150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the comparison, MOVPE GaN layers on silicon substrates were grown using similar conditions. It is shown that MOVPE growth of GaN layers is highly anisotropic for both cases. However, the disorientation of the highly mismatched GaN layer on silicon is different from that characterizing GaN layer deposited on the ceramic substrate. In the latter case the disorientation is much higher, and three dimensional in nature, causing creation of polycrystalline structure having large number of the dislocations. In the case of the GaN layer grown on the silicon substrate the principal disorientation is due to rotation around c-axis, causing creation of mosaic structure of edge dislocations. Additionally, it is shown that the typical grain size in AlN nucleation layer on Si is smaller, of order of 20 nm. These two factors contribute to pronounced differences in later stage of the growth of GaN layer on the ceramic. Due to high growth anisotropy an appropriately thick GaN layer can, eventually, develop flat surfaces suitable for construction of optoelectronic and electronic structures. As shown by the TEM data, this can be achieved only at the cost of creation of the relatively large density of dislocations and stacking faults. The latter defects were not observed for the GaN growth on Si substrates.

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“…These are a serious obstacle of the growing high quality GaN epilayer on Si substrates. Therfore, a range of buffer layers, including SiC [2], low temperature-deposited GaN [3], and AlN [4][5][6], has been investigated as buffer layer to minimize the lattice and thermal expansion mismatch between the GaN layer and Si substrate. AlN is the most universal buffer layer because it supports a high-quality GaN epitaxial layer due to the good wettability of GaN, which produces two-dimensional(2D) growth [7], thereby preventing a meltback-etching reaction of Si with Ga [3,8].…”

Section: Introductionmentioning

confidence: 99%

Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al‐preseeding and HT AlN buffer layers

Kim

Hong

Lim

2010

Phys. Status Solidi (c)

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We have investigated the crack formation in GaN layers grown on Si(111) substrates by MOCVD using an AlN buffer layers and Al‐preseeding process. With an appropriate AlN buffer thickness using optimal TMAl flow rate, we were able to counteract the crack formation usually observed in GaN layers deposited on Si(111) substrate. With a 120 nm thick AlN buffer layer, TMAl source flow rate 18 μmol/min and Al‐preseeding time 5 s, we were able to obtain nearly crack free 2.5 μm GaN surface and a (002) plane HR‐XRD rocking curve FWHM of385 arcsec is achieved. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

Cited by 23 publications

References 14 publications

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al‐preseeding and HT AlN buffer layers

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