Abstract:Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB) induced Ga + ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga + ions during milling is studied for a wide range of ion doses, ranging from about 10 14 to 10 17 ions/cm 2 , using X-ray photoelectron spectroscopy (XPS). Ion implanta… Show more
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