Investigation of electrical properties of organic memristors based on thin polyaniline-graphene films

Berzina, Tatiana; Gorshkov, Konstantin; Erokhin, Victor; Nevolin, V. K.; Chaplygin, Yu. A.

doi:10.1134/s1063739713010022

Cited by 12 publications

(5 citation statements)

References 7 publications

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“…There are numerous polymers that have been investigated for memristive devices, a list of which is rapidly growing, including polyethylene dioxythiophene:polystyrene sulfonic acid (PEDOT:PSS) [204], polyvinyl alcohol (PVA) [205], Co(III) polymer with an azo-aromatic backbone [206], p-toluenesulfonic acid (TsOH)-doped poly(Schiff base) [207]], poly[2-methoxy-5-(2'-ethylhexyloxy)-(p-phenylenevinylene)] (MEH:PPV) [208], polyaniline with Li+-doped polyetheneoxide (PANI:PEO) [209], [210], dithienopyrrole and benzodithiophene polymers [70], to name only a few (see [199] for a review of many of the polymer-based memristors to date). Techniques for deposition of these polymeric materials are solution-based processes, such as spin coating, dip coating, spray coating, ink-jet printing, roller coating, and blade coating, rather than vacuum deposition methods, due to the likelihood of material decomposition/ degradation during deposition.…”

Section: Organic/metal-organicmentioning

confidence: 99%

Reconfigurable Memristive Device Technologies

et al. 2015

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In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments

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Section: Organic/metal-organicmentioning

confidence: 99%

Reconfigurable Memristive Device Technologies

et al. 2015

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“…In this study the technology of thin-film planar memristive element assembly was similar to that described in the previous papers. [8][9][10][11][12]22 I-V curves for the elements obtained at the day of preparation and 6 days later are represented in Fig. 6.…”

Section: Planar Memristive Elementsmentioning

confidence: 99%

“…8 Resistivity of such elements depends on the oxidation state of the thin PANI film via its electrochemical reaction with a silver chloride electrode, accompanied by ion migration through a separating polyethylene oxide (PEO) layer. [8][9][10][11][12][13] The most reliable method of thin PANI layer preparation is transfer on the solid substrate of the Langmuir PANI layer formed on the water surface. Therefore, a deep understanding of the effect of Langmuir layer preparation conditions on its conductivity and crystallinity is required for the preparation of memristive devices with improved properties.…”

Section: Introductionmentioning

confidence: 99%

Planar and 3D fibrous polyaniline-based materials for memristive elements

et al. 2017

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The memristive elements constructed using polymers - polyaniline (PANI) and polyethyleneoxide (PEO) - could be assembled on planar thin films or on 3D fibrous materials. Planar conductive PANI-based materials were made using the Langmuir-Schaefer (LS) method, and the 3D materials - using the electrospinning method which is a scalable technique. We have analyzed the influence of PANI molar mass, natures of solvent and subphase on the crystalline structure, thickness and conductivity of planar LS films, and the influence of PANI molar mass and the PANI-PEO ratio on the morphological and structural characteristics of 3D fibrous materials.

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“…[ 1 ] Another less known paradigm, the so-called Koomey's law, stating that the computing effi ciency doubles every 1.57 years, poses other important challenges, since the effi ciency of rechargeable energy sources is substantially wileyonlinelibrary.com memristive properties, or better "memcapacitive," as suggested elsewhere. [16][17][18][19][20] In those composites electrons behave as massless relativistic particles. [ 11 ] It is therefore expected that the introduction of graphene into PANI matrices would enhance the electronic characteristics of the ICP or even open the possibility of new electronic effects.…”

Section: Introductionmentioning

confidence: 99%

Impedance Hyperbolicity in Inkjet‐Printed Graphene Nanocomposites: Tunable Capacitors for Advanced Devices

Chiolerio

Porro

Bocchini

2016

Adv Elect Materials

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constant and any other evolution is based on device architecture alone. [ 2 ] Based on these considerations, how can the computational power of today's electronic environment be further increased and the power consumption concurrently reduced? The sources of power consumption in a microprocessor are three: dynamic power consumption (charging and discharging of parasitic capacitances during commutation), dynamic shortcircuit power consumption (due to accidental simultaneous conduction between some transistors in the closed state during operation), and leakage power consumption (due to leakage currents fl owing even when the system is in idle mode, which accounts for a total of 40%). [ 3 ] Thus, the major heat source is due to dynamic operation and could be mitigated by reducing parasitic capacitances. Scaling lateral cell size requires enormous efforts from the technological point of view. Better, compensating parasitic capacitances by means of negative capacitors, is a route never attempted due to the lack of simple solutions providing a single material featuring such property: frequently negative capacitance is emulated by a network of standard components and is pretty a complex tool, requiring more than ten transistors. [ 4 ] Placing discrete/integrated components and boosting commercial products by either extending their working frequency range or reducing their power consumption would require a simplification for electronic engineers.Impedance properties of multicomponent organic materials based on polyaniline (PANI) showed revolutionary phenomena such as negative permittivity, giant magnetoresistance, and negative supercapacitance [ 5,6 ] and exciting corresponding applications, in particular electrochemical supercapacitors. [7][8][9] These effects are thought to be due to short range exchange energy transfer (EET) between the two components [ 10 ] and quantum relativistic effects. [ 11 ] PANI has become one of the most important intrinsically conducting polymers (ICPs) and has been intensively studied in the last two decades. [12][13][14] Recent works [ 6,15 ] have demonstrated that PANI can be used for the synthesis of functional inks that can be processed by digital printing, showing unusual electronic properties such as negative supercapacitance in the low-frequency range. A peculiar charge versus DC voltage behavior, shaped as the typical "butterfl y" diagram, is a clear evidence for underlying An easy method for the fabrication of a completely tunable capacitor based on inkjet-printed hybrid organic systems is here reported. The quantum relativistic properties of graphene-induce electronic resonances between the polyaniline polymeric matrix and the graphene fi ller, with extremely long transfer rates. These events induce peculiar physical phenomena due to impedance hyperbolicity, such as voltage-controlled phase shifting. The apparent capacitance is shown to diverge to infi nity having a sign dependent on the frequency sweep direction. Hence devices may be geometrically tuned to operate with desired ca...

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Investigation of electrical properties of organic memristors based on thin polyaniline-graphene films

Cited by 12 publications

References 7 publications

Reconfigurable Memristive Device Technologies

Reconfigurable Memristive Device Technologies

Planar and 3D fibrous polyaniline-based materials for memristive elements

Impedance Hyperbolicity in Inkjet‐Printed Graphene Nanocomposites: Tunable Capacitors for Advanced Devices

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