Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure

Güllü, H. H.; Surucu, O.; Terlemezoglu, M.; Yıldız, D. E.; Parlak, M.

doi:10.1007/s10854-019-01913-w

Cited by 13 publications

(10 citation statements)

References 51 publications

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“…Furthermore, the peak intensity and peak positions were affected by the frequency and voltage changes depending on the Maxwell-Wagner polarization. The Maxwell-Wagner polarization can be referred to accumulating of the charge carriers at the boundaries [29].…”

Section: Resultsmentioning

confidence: 99%

“…The peaks were observed in the depletion region, and they shifted towards to accumulation region for increasing frequency. The peak behaviors of the M 00 values in the depletion region can be based on the particular distribution of the interface states such as mobile ions, stable oxide charges, or ionized traps and relaxation time of the charges in the interface [29]. There is also fluctuation at the M 00 values for forward biases because the M 00 values decreased with increasing frequency up to 400 kHz and then increased towards 1 MHz.…”

Section: Resultsmentioning

confidence: 99%

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The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo 5 S 8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo 5 S 8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo 5 S 8 /p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage-and frequencydependent dielectric properties of the Au/CuCo 5 S 8 /p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from -2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e 0 ) and dielectric loss (e 00 )), electric modulus (M 0 and M 00 ), and ac electrical conductivity (r) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo 5 S 8 /p-Si heterojunction device has the frequency-and voltage-dependent dielectric characteristics, and can be considered as switching applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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“…One well-known means to boost photocarrier generation at the donor–acceptor interface and enhance charge extraction via bicontinuous percolating networks is to apply bulk heterojunction (BHJ) architecture that consists of a blend of phase-separated donor and acceptor . Compared to fullerene acceptors, nonfullerene acceptors have received more attention because of the wide absorption range, adjustable energy levels, and good morphology stability, which further promote the efficiency of organic photovoltaic devices. , Although many high-performance OPDs based on nonfullerene acceptors have been already demonstrated in the past years, suppressing the J d in OPDs is still a crucial subject on the way to commercialize especially in solution-processed devices. − Meanwhile, recent evidence suggests that the variation of temperature may induce an order of magnitude change in J d . − which has a significant impact on D * of OPDs. There is a growing need to develop high-performance photodetectors that are suitable for operation under room temperature or even high temperature.…”

Section: Introductionmentioning

confidence: 99%

“…11−14 Meanwhile, recent evidence suggests that the variation of temperature may induce an order of magnitude change in J d . 15−17 which has a significant impact on D* of OPDs. There is a growing need to develop high-performance photodetectors that are suitable for operation under room temperature or even high temperature.…”

Section: ■ Introductionmentioning

confidence: 99%

Organic Photodiodes with Thermally Reliable Dark Current and Excellent Detectivity Enabled by Low Donor Concentration

Zhang

Cao

Song

et al. 2023

ACS Appl. Mater. Interfaces

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Reducing the dark current (J d) under reverse bias while maintaining a high external quantum efficiency (EQE) is essential for the practical application of organic photodiodes (OPDs). However, the high J d of OPDs is generally difficult to reduce because its origin in organic photodiodes is still not well understood and is strongly temperature dependent. To address the issues related to high J d in typical OPDs, we investigate fullerene-based OPDs with various donor concentrations. It is surprising that OPDs with a low donor concentration in the active layer can achieve a very low J d of 1.68 × 10–7 mA cm–2 at a reverse bias of −2 V, which is almost temperature-independent owing to the low polymer content. More importantly, the fullerene-based OPDs with a low donor concentration of 5 wt % can still achieve an external quantum efficiency (EQE) as high as 40%, resulting in a promisingly high detectivity of above 1013 Jones at 300–800 nm compared to the OPDs with a standard donor/acceptor ratio. The presented optimized OPD device can also be used for real-time heart rate detection, indicating its potential for practical photon-sensing applications.

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“…With the popularity of this Zn-chalcogenides, ZnSe has been point of interest with various deposition techniques and used in several technological applications. In literature, these works are related to both crystal and thin film form of this binary structure [11][12][13][14][15][16][17][18][19][20][21]. Growing from melt is the common method in the production of high quality ZnSe crystals and they have been mostly in use as semiconductor detectors [20,21].…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film

et al. 2020

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Structural and optical properties of ZnSe thin films grown by electron-beam evaporation technique were reported in the present paper. X-ray diffraction pattern exhibited a single peak around 27° which is well-suited with cubic phase of the films. Energy dispersive X-ray spectroscopy analyses resulted in atomic composition ratio of Zn/Se nearly 1.0 which corresponds to the chemical formula of ZnSe. Transmission experiments were performed at various temperatures in between 10 and 300 K. The analyses of the transmission data showed that direct band gap energy of the ZnSe thin films increases from 2.72 to 2.83 eV as temperature was reduced to 10 K from room temperature. The Varshni and O’Donnell-Chen models giving the temperature-band gap energy relation were used to get various optical parameters of the evaporated thin films. Analyses resulted in absolute zero temperature band gap energy as 2.83 eV, temperature coefficient as −5.8 × 10–4 eV K−1 and average phonon energy as 16 meV. Urbach tail state energies were also calculated using absorption coefficient in the low photon energy region as increasing from 173 meV (300 K) to 181 meV (10 K) with decreasing ambient temperature.

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Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure

Cited by 13 publications

References 51 publications

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Organic Photodiodes with Thermally Reliable Dark Current and Excellent Detectivity Enabled by Low Donor Concentration

Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film

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