Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 <i>μ</i>J laser diode

Shi, Wei; Jiang, Huan; Li, Mengxia; Ma, Cheng; Gui, Huaqiao; Wang, Luyi; Xue, Pengbo; Fu, Zhanglong; Cao, Juncheng

doi:10.1063/1.4863738

Cited by 32 publications

(16 citation statements)

References 12 publications

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“…The performance details of laser spots are shown in Table 1, from which it can be seen that the focused spot has much higher energy density. It is also demonstrated in some literatures that triggering position on PCSS affects its performance greatly [13,14], so all of these three spots are applied on the geometrical center of the PCSS, which is displayed in Figure 4. The experiment test circuit is shown in Figure 5.…”

Section: Devices and Test Circuitmentioning

confidence: 99%

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Zhang

Liu

Gao

et al. 2015

IEEE Trans. Dielect. Electr. Insul.

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Various kinds of switches exhibit significant function in the field of pulse power. Among them Photoconductive Semiconductor Switch (PCSS) stands out because of its numerous advantages, such as low time jitter, fast response, high repetition rate, compact size, easy integration and so on. Laser Diode (LD) is small in size, low-cost and can be easily integrated compared with traditional laser devices. Waveguide tube is a kind of laser transmission device. By using LDs which emits laser pulse with a dominant wavelength of 905 nm and a waveguide tube, three different shapes of laser spot are obtained to trigger a semi-insulating GaAs PCSS which has vertical structure. Laser energy and laser power are fixed to 1 μJ and 33.3 W separately. As the illuminating area on the PCSS differs with different shapes of laser spot, the influences of average trigger energy per unit area to the output characteristics of the PCSS are studied. The experiment results demonstrate that not only the total trigger energy but also the energy density influences the characteristics of PCSS. This paper presents related experiment results, and some further discussions are given.

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Section: Devices and Test Circuitmentioning

confidence: 99%

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Zhang

Liu

Gao

et al. 2015

IEEE Trans. Dielect. Electr. Insul.

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“…The high resistivity confirms the good insulating property of the AlGaN film, which is comparable to the reported values of SiC-based PCSSs and is considerably higher than that of GaAs-based PCSSs. 15,16 Figure 3 shows the spectral response curves of the PCSS measured at different bias. The photoresponse curves peak at $270 nm and exhibit a sharp spectral cutoff at $280 nm, which agrees to the optical bandgap energy of the AlGaN active layer.…”

Section: Resultsmentioning

confidence: 99%

Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

Chen

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A solar-blind photoconductive semiconductor switch (PCSS) is first fabricated on high-resistivity Al0.4Ga0.6N layer grown on sapphire substrate. The PCSS exhibits a cutoff wavelength of ∼280 nm and a dark resistivity of ∼1012 Ω cm. A maximum blocking voltage of more than 950 V is obtained, corresponding to a breakdown electric-field of >1.35 MV/cm for the active AlGaN layer. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 500 V bias could produce a peak photocurrent density of 11.5 kA/cm2 within a rise time of ∼15 ns. The fall time of the photocurrent pulse is mainly RC time limited.

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“…The coplanar photoconductive strip lines are 30 µm wide with a 150 µm gap. A 900 nm Si 3 N 4 material is plated on the surface of GaAs material, which mainly can be used as an insulating protective layer [16]. The PCA was placed onto an FR-4 glass-fiber woven reinforcing epoxy-laminate substrate with planar transmission lines.…”

Section: Experimental Setupsmentioning

confidence: 99%

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

2019

Self Cite

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In this paper, the relationship between the terahertz radiation and the spatial distribution of photogenerated carriers under different bias electric field is studied. Terahertz pulses and the photocurrent of SI-GaAs photoconductive antenna are measured by the terahertz time-domain spectroscopy system. The occupancy rate for photogenerated carriers for different energy valleys is obtained by comparing the photocurrent of terahertz field integrating with respect to time with the photocurrent measured by oscilloscope. Results indicate that 93.04% of all photogenerated carriers are located in the Γ valley when the bias electric field is 3.33 kV/cm, and 68.6% of all photogenerated carriers are transferred to the satellite valley when the bias electric field is 20.00 kV/cm. With the bias electric field increasing, the carrier occupancy rate for the satellite valley tends to saturate at 72.16%. In order to obtain the carrier occupancy rate for the satellite valley and saturate value at the high bias electric field, an ensemble Monte Carlo simulation based on the theory of photo-activated charge domain is developed.

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Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 μJ laser diode

Cited by 32 publications

References 12 publications

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Characteristics of GaAs PCSS triggered by 1 μJ laser diode

Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

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