Investigating In2S3 as the buffer layer in CZTSSe solar cells using simulation and experimental approaches

Eghbalifar, Bashir; Izadneshan, Heydar; Solookinejad, Ghahraman; Separdar, Leila

doi:10.1016/j.ssc.2022.114654

Cited by 12 publications

(3 citation statements)

References 26 publications

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“…[18][19][20][21] In 2 S 3 and In 2 Se 3 have frequently shown different valence-varying structures with different crystalline phases, such as a-In 2 Se 3 , 22 b-In 2 Se 3 , 23 g-In 2 Se 3 , 24 k-In 2 Se 3 , 25 a-In 2 S 3 , b-In 2 S 3 , and g-In 2 S 3 . 26 The materials In 2 S 3 and In 2 Se 3 are currently under discussion as potential possibilities for a wide range of applications including photodetectors, 27 solar cells, 28 photoelectrocatalytic water splitting, 29 gas sensors, 30 electromechanical devices and piezotronic sensors, 31 electronic skin strain sensors, 32 electroresistance switching in ferroresistive memory junctions, 33 etc. Furthermore, the extraordinary properties of In 2 S 3 and In 2 Se 3 make them more advantageous in various applications than metal oxides such as CuO, ZnO, and Fe 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures

Khimani,

Kadam,

Giri

et al. 2024

Mater. Adv.

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Section: Introductionmentioning

confidence: 99%

High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures

Khimani,

Kadam,

Giri

et al. 2024

Mater. Adv.

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“…Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) quaternary semiconductor is a favored material for photovoltaic cells that will replace the above materials, and due to its good photovoltaic properties, high absorption coefficient, and direct band gap [4][5][6][7]. The bandgap energy of the CZTSSe layers varies betwixt 1 and 1.5 eV, depending on the Sulfur/Selenium ratio [6,[8][9][10]. The CZTSSe based solar cells have a middle efficiency in comparison to commercial cells based on CIGS, where it is approximately 11% for CZTS cells and it is about 13% for CZTSSe [11].…”

Section: Introductionmentioning

confidence: 99%

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Hafaifa,

Maache,

Bouabdelli

2024

J. Nano- Electron. Phys.

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Numerical simulation of CZTS/CZTSSe tandem solar cells utilizing Silvaco-Atlas was investigated. Firstly, the performances of conventional CZTS/CdS/ZnO and CZTSSe/CdS/ZnO single solar cells with thicknesses for both absorber layers at 360 nm and 3 nm, respectively, were studied independently. A wide band gap CZTS thin-film cell and a narrow band gap CZTSSe-based cell present conversion efficiencies of 11.10% and 13.76% respectively. This agrees with experimental and simulation results previously published. Furthermore, a CZTS/CZTSe tandem cell configuration is identified keeping the identical material properties. A good conversion efficiency of 25.27% was obtained. Finally, the thickness of the CZTS adsorption layer of the top cell was optimized as a crucial factor to enhance the tandem performance. Optimal thickness coinciding to a highest efficiency of 26.05% is 420 nm. The output parameters obtained are, Jsc  28.46 mA/cm 2 , Voc  1.27 V and FF  71.83%. This suggested results may help in the future research and may lead to the fabrication of CZTSSe-based solar cells.

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“…The broad capabilities of SnS 2 make it a suitable candidate for the replacement of hazardous materials in several devices. For solar cells, the use of buffer layers with a band gap of approximately 2.5 eV and partial transparency to visible light usually leads to material choices such as In 2 S 3, , ZnS, − ZnO, , TiO 2, , Zn(O,S), ZnMgO, and the CdS ,, (the most used). These compounds present production cost drawbacks related to their vacuum-based synthesis techniques, which consequently limits scalability.…”

Section: Introductionmentioning

confidence: 99%

Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development

Ribeiro,

Fonseca,

Barreto

et al. 2023

ACS Appl. Mater. Interfaces

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The prediction of semiconductor device performance is a persistent challenge in materials science, and the ability to anticipate useful specifications prior to construction is crucial for enhancing the overall efficiency. In this study, we investigate the constituents of a solar cell by employing scanning tunneling microscopy (STM) and spectroscopy (STS). Through our observations, we identify a spatial distribution of the dopant type in thin films of materials that were designed to present major p-doping for germanium sulfide (GeS) and dominant n-doping for tin disulfide (SnS 2 ). By generating separate STS maps for each semiconductor film and conducting a statistical analysis of the gap and doping distribution, we determine intrinsic limitations for the solar cell efficiency that must be understood prior to processing. Subsequently, we fabricate a solar cell utilizing these materials (GeS and SnS 2 ) via vapor phase deposition and carry out a characterization using standard J−V curves under both dark/illuminated irradiance conditions. Our devices corroborate the expected reduced efficiency due to doping fluctuation but exhibit stable photocurrent responses. As originally planned, quantum efficiency measurements reveal that the peak efficiency of our solar cell coincides with the range where the standard silicon solar cells sharply decline. Our STS method is suggested as a prequel to device development in novel material junctions or deposition processes where fluctuations of doping levels are retrieved due to intrinsic material characteristics such as the occurrence of defects, roughness, local chemical segregation, and faceting or step bunching.

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Investigating In2S3 as the buffer layer in CZTSSe solar cells using simulation and experimental approaches

Cited by 12 publications

References 26 publications

High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures

High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development

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Investigating In2S3 as the buffer layer in CZTSSe solar cells using simulation and experimental approaches

Cited by 12 publications

References 26 publications

High performance photodetectors based on In2S3, In2S1.5Se1.5 and In2Se3 nanostructures

High performance photodetectors based on In2S3, In2S1.5Se1.5 and In2Se3 nanostructures

Improving the Performance of CZTS/CZTSSe Tandem Thin Film Solar Cell

Scanning Tunneling Spectroscopy Method for the Prediction of Semiconductor Heterojunction Performance as a Prequel for Device Development

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High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures

High performance photodetectors based on In₂S₃, In₂S_1.5Se_1.5 and In₂Se₃ nanostructures