Inverted top-emission organic light-emitting device with n-type silicon as cathode

Abstract

Top-emission organic light-emitting devices (OLEDs) with configuration of n-Si (cathode)/Au : Sb 2 nm/Sm 4 nm/AlQ 60 nm/NPB 60 nm/V2O5 10 nm/Au 7 nm (anode) are reported on. We have found that high surface electron concentration and surface modification of n-Si are beneficial to the electron injection. The power efficiency of a device with a 10−3 Ω cm n-Si/Au : Sb cathode is 10 times more than that of a device with a 10 Ω cm n-Si/Au cathode. With an optimized thickness of V2O5, such a device exhibits much higher electroluminescence efficiency (0.8 lm W−1) than the conventional top-emission OLEDs with p-Si or n-Si anodes reported on previously (0.2 lm W−1).