Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device

Abstract

In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p‐i‐n‐metal‐oxide‐semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode‐based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write‐read‐erase‐read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady‐state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems.

A coarse‐grained electrothermal model for organic semiconductor devices

“…For instance, in large-area thin-film organic LEDs the n-doped and p-doped layers cover together more than half of the height of the film, see the middle picture in fig. 2 of Zheng et al 4 Furthermore, the simplicity of reduced models could be utilized to model the doped layers adjacent to the oxide in pinMOS structures, see Figure 1 in Zheng et al 9 In the main part of the paper, we study the analytical properties of the coarse-grained model, that os, existence, boundedness, and regularity of solutions. One crucial point thereby is the analytical treatment of the transfer and boundary conditions between the different subregions, especially the prescribed Dirichlet function for the Poisson equation at the interface to the drift-diffusion subregion.…”

“…For instance, in large‐area thin‐film organic LEDs the n‐doped and p‐doped layers cover together more than half of the height of the film, see the middle picture in fig. 2 of Zheng et al 4 Furthermore, the simplicity of reduced models could be utilized to model the doped layers adjacent to the oxide in pinMOS structures, see Figure 1 in Zheng et al 9 …”

Hexaarylbenzene based high-performance p-channel molecules for electronic applications

“…[34][35][36] The development of organic semiconductors has remarkably improved the development of electronic devices such as organic light-emitting diodes (OLED), organic eld-effect transistors (OFET), organic photovoltaics (OPV), memory devices, sequential logic circuits, radio-frequency identication (RFID) tags, sensors, organic lasers, and wearable electronics. [37][38][39][40][41][42][43][44] Besides, new conceptual designs incorporated with higher exibility and articial intelligence are being introduced in the eld of consumer electronics.…”

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

“…Polymer-based electronic devices have been a popular research area in recent decades due to their unmatched properties, such as light weight, flexibility, low cost, scale-ability, low-temperature processing, tenability, etc. [ 1 , 2 , 3 , 4 ]. As a result, these devices are an excellent choice for light-emitting diodes, solar cells, low-cost RFID, sensors, and many other electronic devices [ 5 , 6 , 7 , 8 ].…”