Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV

Dean, P. J.; Kaminsky, G.; Zetterstrom, R. B.

doi:10.1063/1.1710170

Cited by 155 publications

(35 citation statements)

References 22 publications

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“…1) are 1.0x10 -3 eV.K -1 and =825 K [27], very close to the ones obtained here. This indicates that the band gap of GaP at the  point has very similar temperature dependence in both WZ and ZB phases.…”

Section: Resultssupporting

confidence: 77%

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Panda¹,

Roy²,

Gemmi³

et al. 2013

Applied Physics Letters

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Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV.Resonances at 2.38 eV and 2.67 eV of the E 1 (LO) mode and at 2.67 eV of the A 1 (LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with  9hh and  7V ( 7C ) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the  point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of  point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.

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Section: Resultssupporting

confidence: 77%

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Panda¹,

Roy²,

Gemmi³

et al. 2013

Applied Physics Letters

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“…Except for the appropriate derivative technique such as electroreflectance, another approach to the experimental determination of Δ 0 utilized infrared absorption [2]. Absorption of an infrared photon causes transitions from near Γ 7v to near Γ 8v , so that the peak in the infrared absorption falls near Δ 0 .…”

Section: Resultsmentioning

confidence: 99%

“…Stokowski and Sell made a reflectivity measurement of the GaP crystal grown by the Czochralski method and sliced parallel to a {111} face [1]. The spin-orbit splitting Δ 0 of 80 ± 1 meV was obtained, directly from the logarithmic derivative of the reflectivity of GaP at T = 2 and 300 K. Dean et al took measurements of the low-temperature intrinsic electronic absorption edge of very thin single-crystal ribbons of relatively pure GaP, from the onset of significant absorption near 2.33 eV to well above the lowest energy direct transition near 2.9 eV [2]. The spin-orbit splitting Δ 0 of 82 ± 1 meV at 25 K was obtained.…”

Section: Introductionmentioning

confidence: 99%

Determination of spin-orbit splitting Δ 0 of valence band at Γ for gallium phosphide nanoparticles using fluorescence and infrared spectroscopes

Zhang

2011

Rare Metals

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The value of spin-orbit splitting Δ 0 of gallium phosphide (GaP) nanoparticles was determined. The information concerning the spin-orbit splitting of the valence band at Γ was acquired using fluorescence and infrared spectroscopes. Detailed investigation on the fluorescence characteristics under ultraviolet photoexcitation reveals that two doublets of emission transitions are related to the spin-orbit splitting of the valence band. The origin of two broad violet emissions, 3.00 and 3.10 eV, can be attributed to the direct transitions near the Γ point of the Brillouin zone between the Γ 1 conduction band and Γ 15 valance band, that is, Γ 6c -Γ 8v and Γ 6c -Γ 7v , respectively. The origin of two blue emissions, 2.74 and 2.64 eV, can be attributed to the indirect transitions between the X 1 conduction band and Γ 15 valance band, that is, Δ 5c -Γ 8v and Δ 5c -Γ 7v , respectively. Based on these transitions, the spin-orbit splitting Δ 0 of the GaP nanoparticles is determined as 0.10 eV. The infrared spectrum of the GaP nanoparticles shows a band at 817 cm −1 which is assigned to the transition between the Γ 7v and Γ 8v valence band maxima. It follows therefore that the spin-orbit splitting Δ 0 is 0.10 eV.

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“…However, as shown here, after 50 years, bright luminescence of the long-term ordered bulk GaP crystals clearly is detected in the region from 2.0 eV to 3.2 eV at room temperature (see Figure 3, spectrum 1). It is worth noting further [22] that the absorption coefficient . Obviously, decreasing the thickness of the crystal will increase the contribution from high energy photons and shift the spectral maximum into the ultraviolet.…”

Section: Introductionmentioning

confidence: 99%

Excitonic Crystal and Nanotechnology

Pyshkin¹

2014

NSTOA

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The role and application of bound excitons in nanoscience and technology are discussed in this chapter. Bound excitons are well studied in semiconductors, especially in gallium phosphide doped by nitrogen (GaP:N). Doping of GaP with N leads to isoelectronic substitution of the host P atoms by N in its crystal lattice and to creation of the electron trap with a giant capture cross-section. Therefore, any non-equilibrium electron in the vicinity of the trap will be captured by N atom, attracting a nonequilibrium hole by Coulomb interaction and creating the bound exciton -short-lived nanoparticle with the dimension of the order of 10nm (it is the Bohr diameter of bound exciton in GaP:N). Note, that none of nanotechnology methods are used in creation or selection of dimensions of these nanoparticles -only natural forces of electron-hole interaction and electron capture by the traps are necessary for creation of these nanoparticles. As the result we get something like neutral short-lived atom analoguea particle consisting of heavy negatively charged nucleus (N atom with captured electron) and hole. So called "zero vibrations" do not destroy possible solid phase of bound excitons having these heavy nuclei that gives an opportunity to reach their crystal state -short-lived excitonic crystal.Thus using bound excitons as short-lived analogues of atoms and sticking to some specific rules, including the necessity to build in the GaP:N single crystal the excitonic super lattice with the identity period equal to the bound exciton Bohr dimension, we get a unique opportunity to create a new solid state media -consisting from short-lived nanoparticles excitonic crystal, obviously, with very useful and interesting properties for application in optoelectronics, nanoscience and technology. The following will discuss methods of preparation and possible application of GaP excitonic crystals and nanocrystals in optoelectronics. Preparation and Properties of GaP with Ordered Position of N ImpuritiesCrystals that are grown under conventional laboratory conditions naturally contain a varied assortment of defects such as displaced host and impurity atoms, vacancies, dislocations, and impurity clusters. These defects result from relatively rapid growth conditions and inevitably lead to the deterioration of optical and mechanical properties of the crystal. For instance, defects in freshly-prepared GaP:N single crystals completely suppress their luminescence at room temperature, which is very bright in the same, but aged perfect crystal.With the lapse of time driving forces such as impurity diffusion, strain relaxation, and thermodynamic minimization of the free energy associated with properly directed chemical bonds can result in an ordered distribution of impurity and host atoms. Evaluation of the characteristic time of such reordering, based on the known Ising model, suggests that the time for the substitution reaction associated with N diffusion along P sites in GaP:N is about 15 years at room temperature [1]. Accordingly, observations ...

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Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV

Cited by 155 publications

References 22 publications

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Determination of spin-orbit splitting Δ 0 of valence band at Γ for gallium phosphide nanoparticles using fluorescence and infrared spectroscopes

Excitonic Crystal and Nanotechnology

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