Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions

Jäger, N. D.; Weber, E. R.; Salmerón, M.

doi:10.1116/1.1350839

Cited by 9 publications

(8 citation statements)

References 22 publications

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“…4, we present cut-outs showing details of the atomically resolved lattice. The voltage-dependent changes in the apparent direction of the atomic rows are similar to what is reported for n-type GaAs(1 1 0) [23,24]. The filledstates images (Fig.…”

Section: Resultssupporting

confidence: 83%

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Scanning tunneling microscopy images of Al0.2GA0.8As-{110}: Influence of applied bias voltage and comparison between filled- and empty-states images

Raad

Koenraad

2004

Surface Science

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Section: Resultssupporting

confidence: 83%

“…We observe a voltage-dependent change in atomic corrugation that is similar to what has been reported previously for n-type GaAs{1 1 0} [20,23,24]. At the same time, bright and dark areas appear at low negative voltage which we explain in terms of fluctuations in the electron-density of the surfaceaccumulation layer.…”

Section: Discussionsupporting

confidence: 79%

Scanning tunneling microscopy images of Al0.2GA0.8As-{110}: Influence of applied bias voltage and comparison between filled- and empty-states images

Raad

Koenraad

2004

Surface Science

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“…Finally, the observation of mostly atomic rows along the ͓11 0͔ direction is indicative of the corrugation being dominated by filled-arsenic-derived dangling bond states. 22,23 Note that in the nonequilibrium tunneling contact the contribution of the tunneling current from the accumulation layer near the surface is limited by the low conductivity in semiinsulating GaAs and thus is lower than the current from the valence band. Thus, the maxima in Fig.…”

Section: A Tunneling Through a Vacuum Barriermentioning

confidence: 99%

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

et al. 2002

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We report on atomically resolved scanning tunneling microscopy images and tunneling spectra of ͑110͒ cleavage surfaces of semi-insulating GaAs without illumination at room temperature. With help of simple model calculations we extract the physical mechanisms involved in the tunneling processes from and into semi-insulating GaAs. Atomically resolved images can only be observed at negative voltages, while no tunneling into empty states is possible without illumination. This is explained, on the one hand, by the absence of a carrier inversion at the semiconductor surface without illumination under the nonequilibrium tunneling contact conditions. On the other hand, at negative voltages in the noncontact mode an accumulation at the surface occurs and leads to tunneling of electron from the valence band states into the empty tip states. This current is limited by the tunneling through the vacuum barrier and the scanning tunneling microscopy images are found to show the occupied dangling bond states above the arsenic atoms. In the point contact mode the current is limited by tunneling through the space charge region without and with illumination. The implications of the results for the investigation of low-conductivity materials by scanning tunneling microscopy are discussed.

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“…6 In spite of this, recent literature on voltage-dependent changes in STM images of GaAs ͕110͖ considers TIBB only in qualitative terms. 1, 3,7 In this paper we compare voltage-dependent STM images of n-type and p-type GaAs ͕110͖ to the results of a onedimensional model that calculates the amount of TIBB as a function of bias voltage. The study involves both polarities of the bias voltage.…”

Section: Introductionmentioning

confidence: 99%

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

2002

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Atomically resolved, voltage-dependent scanning tunneling microscopy ͑STM͒ images of GaAs͑110͒ are compared to the results of a one-dimensional model used to calculate the amount of tip-induced band bending for a tunneling junction between a metal and a semiconductor. The voltage-dependent changes in the morphology of the atomic lattice are caused by the four surface states of the GaAs͑110͒ surface contributing in varying relative amounts to the total tunneling current. Tip-induced band bending determines which of these states contributes to the total tunneling current at a given bias voltage, and thus has a profound influence on the voltage-dependent STM-images. It is shown that certain voltage regions exist, for which none of the surface states present at the GaAs͑110͒ surface can contribute to the tunneling current. For these voltages, tunneling occurs between the tip and bulk states of the sample through a surface depletion layer several nm wide. Nevertheless, we observe atomic, surface like corrugation for these circumstances.

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Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions

Cited by 9 publications

References 22 publications

Scanning tunneling microscopy images of Al0.2GA0.8As-{110}: Influence of applied bias voltage and comparison between filled- and empty-states images

Scanning tunneling microscopy images of Al0.2GA0.8As-{110}: Influence of applied bias voltage and comparison between filled- and empty-states images

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

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