Intermodulation in heterojunction bipolar transistors

Maas, S.A.; Nelson, B.; Tait, D.

doi:10.1109/22.121719

Cited by 109 publications

(31 citation statements)

References 11 publications

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“…The calculation of the third-order Volterra kernel is restricted to the third-order intermodulation frequency at . The complete expression is given by (5), shown at the bottom of the page, where…”

Section: A Volterra Series Analysis Of a Ce Stagementioning

confidence: 99%

A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

Heijden

Graaff

Vreede

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)

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Abstract-Second-harmonic control is implemented in a balanced common-emitter configuration to facilitate frequency-independent third-order intermodulation distortion cancellation. Moreover, this circuit configuration facilitates a simultaneous match for either power and linearity or noise and linearity. Experiments demonstrated an improvement of over 15 dB in the output third-order intercept point while maintaining freedom in the choice of load and source impedance.

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Section: A Volterra Series Analysis Of a Ce Stagementioning

confidence: 99%

A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

Heijden

Graaff

Vreede

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212)

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“…Although the bipolar transistor has power-handling capabilities, it has highly non-linear capacitance at the base junction [9]. This capacitor results in a large secondorder harmonic, and it degrades the linearity performance.…”

Section: Nonlinear Base Capacitance In Bipolar Transistormentioning

confidence: 99%

A 2 GHz 20 dBm IIP3 Low-Power CMOS LNA with Modified DS Linearization Technique

Rastegar¹,

Lim²,

Ryu³

2016

JSTS:Journal of Semiconductor Technology and Science

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“…Field-effect transistors (MOSFET's as well as GaAs MESFET's and PHEMT's) gen- erally exhibit improved third-order intermodulation distortion compared with bipolar devices, due to their near square-law current versus voltage behavior. On the other hand, bipolar transistor amplifiers have recently demonstrated outstanding linearity performance as well, apparently due to the partial cancellation of the resistive and capacitive nonlinearities in the base-emitter junction at certain frequencies [28]. The tradeoff between the use of silicon bipolar and MOS devices for LNA applications is also complicated by a number of factors.…”

Section: A Low-noise Amplifiersmentioning

confidence: 99%

Integrated circuit technology options for RFICs-present status and future directions

Larson

1998

IEEE J. Solid-State Circuits

205

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Abstract-This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

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Intermodulation in heterojunction bipolar transistors

Cited by 109 publications

References 11 publications

A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

A 2 GHz 20 dBm IIP3 Low-Power CMOS LNA with Modified DS Linearization Technique

Integrated circuit technology options for RFICs-present status and future directions

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