Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Chuang, Tung‐Han; Lin, Hong‐Ping; Tsao, Chia Wen

doi:10.1007/s11664-006-0150-9

Cited by 14 publications

(11 citation statements)

References 7 publications

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“…Especially the eutectic In-48wt.%Sn alloy has received considerable attention due to its low melting point of 118°C. [2][3][4][5][6][7] There are many methods to apply the solder alloy as a bonding interlayer, e.g., solder paste printing, 2 molten solder dipping, 3 and electroplating. 4 One such method is physical vapor deposition (PVD) technology, which forms thin films of In or/and Sn on substrates such as Cu or Au.…”

Section: Introductionmentioning

confidence: 99%

“…Under certain bonding conditions, the solder materials interact with Cu or Au to form a bonding joint. [5][6][7][8] This process often involves so-called diffusion soldering, 9 a joining method that combines features of conventional soldering and diffusion bonding processes. The bonding is produced when the substrate metal dissolves into the molten solder and rapidly reacts to form intermetallic compounds (IMCs) with the solder materials.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8] Hermetic packaging has also been developed at temperatures as low as 150°C by using an In-Sn alloy. 8 However, no-one has studied the interfacial reaction of thin-film solder with the substrate and the remelting temperature of the final joint, which are very important in manufacturing operations such as multiple reflows.…”

Section: Introductionmentioning

confidence: 99%

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A Hermetic Seal Using Composite Thin-Film In/Sn Solder as an Intermediate Layer and Its Interdiffusion Reaction with Cu

Yan

Lee

et al. 2008

Journal of Elec Materi

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A bonding joint between Cu metallization and evaporated In/Sn composite solder is produced at a temperature lower than 200°C in air. The effects of bonding temperature and duration on the interfacial bonding strength are studied herein. Cross sections of bonding joints processed at different bonding conditions were examined by scanning electron microscopy (SEM). The optimal condition, i.e., bonding temperature of 180°C for 20 min, was chosen because it gave rise to the highest average bonding strength of 6.5 MPa, and a uniform bonding interface with minimum voids or cracks. Good bond formation was also evidenced by scanning acoustic imaging. For bonding couples of patterned dies, a helium leak rate of 5.8 9 10 -9 atm cc/s was measured, indicating a hermetic seal. The interfacial reaction between Cu and In/Sn was also studied. Intermetallic compounds (IMCs) such as AuIn 2 , Cu 6 Sn 5 , and Cu 11 In 9 were detected by means of x-ray diffraction analysis (XRD), and transmission electron microscopy (TEM) accompanied by energy-dispersive x-ray (EDX) spectroscopy. Chemical composition analysis also revealed that solder interlayers, Sn, and In were completely converted into IMCs by reaction with Cu. All the IMCs formed in the joints have remelting temperatures above 300°C according to the Cu-In, Cu-Sn, and Au-In phase diagrams. Therefore, the joint is able to sustain high service temperatures due to the presence of these IMCs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Hermetic Seal Using Composite Thin-Film In/Sn Solder as an Intermediate Layer and Its Interdiffusion Reaction with Cu

Yan

Lee

et al. 2008

Journal of Elec Materi

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“…Since solid liquid interdiffusion bonding has the merits of a low bonding temperature process and high temperature application, it has been applied in the past few decades to the manufacturing of microwave packages, high power devices, thick-film resistors, GaAs/Si wafer packages, and even gold jewelry. Recently, diffusion soldering has also been employed for ceramic multichip modules [2,3], MEMS packaging [4], semiconductor packaging [5], hybrid joining [6], and hermetic package sealing [7].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Bonding of Pd/Ni Assembly for Hydrogen Purifier

Lin¹,

Chuang²,

Tsai³

et al. 2016

World Congress on Mechanical, Chemical, and Material Engineering

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-For manufacturing a Pd cell for hydrogen purification, a key technology is the bonding of a Pd fine tube with a stainless steel grasp. In this study, the SLID method has been employed to join Pd sheet and Ni plate to evaluate the bendability between a Pd tube and a Ni coated stainless steel grasp. The results indicated that directly inserting a Sn interlayer with a thickness of 8.5μm between the Pd sheet and Ni plate caused the formation of Ni3Sn4 and PdSn4 intermetallic compounds, respectively. However, certain Sn interlayer remained after SLID bonding and low shear strength of 5.3 MPa was obtained. Furthermore, the remaining of low melting point Sn interlayer cannot withstand the operating temperature (above 350 ºC) of SLID assembled Pd cell for hydrogen purification. Reducing the Sn interlayer thickness to 3 μm led to the complete exhausting of Sn interlayer. Unfortunately, a long crack appeared at the Ni3Sn4/PdSn4 interface and a low bonding strength was resulted. Adding an Ag thin layer between the Sn coated Pd sheet and Ni plate caused an Ag3Sn intermetallic compound to form between the Ni3Sn4 and PdSn4 layers, and cracking of the Pd/Ni joint was prevented. This improvement led to satisfactory bonding strengths ranging from 10.6 to 17.3 MPa. High temperature storage at 400ºC for 100 hr did not degrade the bonding interfaces or bonding strengths.

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“…1 . For the high-melting-point component for eutectic bonding, Cu is a very good candidate since it is widely used in modern packaging technology, and at the same time it is much cheaper and is wettable with various solders [8], [9]. Therefore we selected Sn/In/Cu metallization for wafer-level hermetic bonding.…”

mentioning

confidence: 99%

Wafer-Level Hermetic Bonding Using Sn/In and Cu/Ti/Au Metallization

Yan

Lee

Choi

et al. 2009

IEEE Trans. Comp. Packag. Technol.

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Abstract-Low-temperature hermetic wafer bonding using In/Sn interlayer and Cu/Ti/Au metallization was investigated for microelectromechanical systems packaging application. In this case, the thin Ti layer was used as a buffer layer to prevent the diffusion between solder interlayer and Cu after deposition and to save more solders for diffusion bonding process. Bonding was performed in a wafer bonder at 180 and 150 C for 20 min with a pressure of 5.5 MPa. It was found that bonding at 180 C voids free seal joints composed of high-temperature intermetallic compounds were obtained with good hermeticity. However, with bonding at 150 C, voids were generated along the seal joint, which caused poor hermeticity compared with that bonded at 180 C. After four types of reliability tests-pressure cooker test, high humidity storage, high-temperature storage, and temperature cycling test-dies bonded at 180 C showed good reliability properties evidenced by hermeticity test and shear tests. Results presented here prove that high-yield and low-temperature hermetic bonding using Sn/In/Cu metallization with thin Ti buffer layer can be achieved.Index Terms-Hermeticity, In-Sn, microelectromechanical systems (MEMS), reliability, wafer bonding, wafer-level packaging.

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Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Cited by 14 publications

References 7 publications

A Hermetic Seal Using Composite Thin-Film In/Sn Solder as an Intermediate Layer and Its Interdiffusion Reaction with Cu

A Hermetic Seal Using Composite Thin-Film In/Sn Solder as an Intermediate Layer and Its Interdiffusion Reaction with Cu

Low Temperature Bonding of Pd/Ni Assembly for Hydrogen Purifier

Wafer-Level Hermetic Bonding Using Sn/In and Cu/Ti/Au Metallization

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