In the article by Jürgen T. Kohlhepp et al. [1], selected as Editor's Choice in this issue of phys. stat. sol. (a) 189, No. 2 (2002), large zero‐bias resistance anomalies as well as an extremely strong decrease of the magnetoresistance in Co/Al2O3/Co magnetic tunnel junctions with thin Cr interfacial layers are reported. These novel structures have recently become a topic of intense research, due to their potential employment in non‐volatile MRAMs as well from a fundamental point of view. The cover picture shows the normalized tunnel magnetoresistance (TMR) as a function of the Cr interlayer thickness at 10 K for samples with Cr and Co/Cr/Co interlayers.
The paper is a contribution to the Proceedings of the First Seeheim Conference on Magnetism (SCM2001), to be continued in the following issue of phys. stat. sol. (a) 189, No. 3 (2002).