volume 80, issue 3, P12-22 1997
DOI: 10.1002/(sici)1520-6432(199703)80:3<12::aid-ecjb2>3.0.co;2-9
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Abstract: In this study, a layered film composed of Pd and hydrogenated amorphous silicon (a‐Si:H) is thermally annealed at a constant heating rate, and the interfacial reaction as well as the formation mechanism of the Pd silicide (Pd2Si) are investigated by techniques such as hydrogen evolution, analysis, X‐ray diffraction, and Rutherford backscattering spectrometry. The silicide formation reaction at the interface of Pd/a‐Si:H is activated from approx. 250 °C. It is seen that Pd silicide in the amorphous state is gen…

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