We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides T X 2 (T = Mo, W, X = S, Se) creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field strength. Contrary to the T X 2 monolayers, spin-orbit splittings and valley polarization are absent in bilayers due to the presence of inversion symmetry. This symmetry can be broken by an electric field, and the spin-orbit splittings in the valence band quickly reach values similar to those in the monolayers (145 meV for MoS 2 , . . . , 418 meV for WSe 2 ) at saturation fields less than 500 mVÅ −1 . The band gap closure results in a semiconductor-metal transition at field strength between 1.25 (WX 2 ) and 1.50 (MoX 2 ) VÅ −1 . Thus, by using a gate voltage, the spin polarization can be switched on and off in T X 2 bilayers, thus activating them for spintronic and valleytronic applications.