Interface-induced room-temperature multiferroicity in BaTiO3

València, S.; Crassous, Arnaud; Bocher, Laura; Garcia, Vincent; Moya, Xavier; Cherifi, Ryan O.; Deranlot, C.; Bouzéhouane, K.; Fusil, S.; Zobelli, Alberto; Gloter, Alexandre; Mathur, N. D.; Gaupp, A.; Abrudan, R.; Radu, F.; Barthélémy, A.; Bibès, Manuel

doi:10.1038/nmat3098

Cited by 357 publications

(315 citation statements)

References 48 publications

(64 reference statements)

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“…The TER associated with ferroelectric polarization switching has been observed experimentally in BaTiO 3 -and PbTiO 3 -based FTJs in which either La 2/3 Sr 1/3 MnO 3 or SrRuO 3 is used as one of the electrodes while the other side of the ferroelectric thin film is in contact with the tip of an atomic force microscope [24][25][26] . The predicted simultaneous TMR and TER effects 23 have also been demonstrated experimentally in La 2/3 Sr 1/3 MnO 3 /BaTiO 3 /Fe (or Co) MFTJs [27][28][29][30][31][32][33][34] . Although the majority of the work deals with low bias, the existence of TER at finite bias has been predicted based on calculations using a semiclassical approximation 19 and first-principles 35 in FTJs, and model tight-binding calculations in MFTJs 36 .…”

Section: Introductionsupporting

confidence: 59%

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

et al. 2015

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Based on model calculations we predict electric-field control of the spin transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers. We demonstrate that the bias dependence of the in-plane, T , and out-of-plane, T ⊥ , components of the STT can be dramatically modified by the ferroelectric polarization. In particular, the magnitude of the STT can be enhanced or suppressed by switching the polarization direction and in some cases the sign of STT can be toggled. The underlying mechanism is the combination of polarization-induced symmetry breaking and the interplay of the bias-induced and polarization-induced spin-dependent screening giving rise to a rich behavior of the electrostatic potential energy profile. These properties could lead to enhanced switching efficiency in STT-based devices and open a new avenue for applications of multiferroic devices.

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Section: Introductionsupporting

confidence: 59%

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

et al. 2015

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“…The observed coupling yields a sizeable effect on the averaged electronic structure of BTO, much too large to be assigned to an interfacial effect like a charge transfer between BTO and CFO and a spin coupling between the polarization of Ti 4 þ in BTO and Fe ions in CFO as in the work of Valencia et al 3 Thus, the effect in the electric in-plane polarization of BTO obtained in this work extends over a large area. Under the constraint of completely regular arrays of CFO nanopillars 12 , one might even envisage data-storage concepts by encoding the local polarization patterns of single nanopillars (Fig.…”

Section: Discussionmentioning

confidence: 49%

“…Because the choice of single-phase multiferroic materials being suitable at room temperature is limited, the use of magnetoelectric two-phase composites has proven to be more promising 2 . Recently, even classic materials such as ferromagnetic Fe and ferroelectric BaTiO 3 (BTO) have been shown as potentially useful 3 . They reveal electric field-controllable magnetoelectric coupling via interfacial spin polarization of Ti 4 þ .…”

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confidence: 99%

Electric in-plane polarization in multiferroic CoFe2O4/BaTiO3 nanocomposite tuned by magnetic fields

et al. 2013

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Ferrimagnetic CoFe 2 O 4 nanopillars embedded in a ferroelectric BaTiO 3 matrix are an example for a two-phase magnetoelectrically coupled system. They operate at room temperature and are free of any resource-critical rare-earth element, which makes them interesting for potential applications. Prior studies succeeded in showing strain-mediated coupling between the two subsystems. In particular, the electric properties can be tuned by magnetic fields and the magnetic properties by electric fields. Here we take the analysis of the coupling to a new level utilizing soft X-ray absorption spectroscopy and its associated linear dichroism. We demonstrate that an in-plane magnetic field breaks the tetragonal symmetry of the (1,3)-type CoFe 2 O 4 /BaTiO 3 structures and discuss it in terms of off-diagonal magnetostrictive-piezoelectric coupling. This coupling creates staggered in-plane components of the electric polarization, which are stable even at magnetic remanence due to hysteretic behaviour of structural changes in the BaTiO 3 matrix. The competing mechanisms of clamping and relaxation effects are discussed in detail.

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“…4,5 The smaller the physical structures get, the more relevant interfaces become in determining their properties. This is true also for magnetic systems, where interface phenomena, such as exchange bias, have always been playing a major role, 6 and now are keys to obtaining an atomic-scale engineering of relevant magnetic features.…”

mentioning

confidence: 99%

Magnetic anisotropy at the buried CoO/Fe interface

Giannotti

Hedayat

Vinai

et al. 2016

Applied Physics Letters

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Interfaces between antiferromagnetic CoO and ferromagnetic Fe are typically characterized by the development of Fe oxides. Recently, it was shown that the use of a proper ultra-thin Co buffer layer prevents the formation of Fe oxides [A. Brambilla, A. Picone, D. Giannotti, M. Riva, G. Bussetti, G. Berti, A. Calloni, M. Finazzi, F. Ciccacci, L. Duò, Appl. Surf. Sci. 362, 374 (2016)]. In the present work we investigate the magnetic properties of such an interface and we find evidence for an in-plane uniaxial magnetic anisotropy, which is characterized by a multijump reversal behavior in the magnetization hysteresis loops. X-ray photoemission spectroscopy and element-sensitive hysteresis loops reveal that the occurrence of such an anisotropy is a phenomenon developing at the very interface.Interfaces between ferromagnetic metals (FM) and oxide (O) films are ubiquitous in fields such as spintronics, 1,2 electronics, 3 and multiferroics. 4,5 The smaller the physical structures get, the more relevant interfaces become in determining their properties. This is true also for magnetic systems, where interface phenomena, such as exchange bias, have always been playing a major role, 6 and now are keys to obtaining an atomic-scale engineering of relevant magnetic features. 7,8 In the case of O/FM, several recent observations demonstrated how the interface chemical interactions directly influence the magnetic properties by, for instance, introducing uncompensated magnetic moments, 9 enhancing the coupling effects, 10 or even by creating such effects in unexpected ways, like the case of the nominally not exchange biased MgO/Fe interface. 11 Among O/FM systems, those containing antiferromagnetic (AF) oxides have been the subject of a great number of both experimental and theoretical investigations. [12][13][14][15][16] The preparation conditions, as well as the growth order, are of great importance to understand and control their magnetic properties. 17 In particular, the CoO/Fe(001) interface has been a workbench for many investigations related to AF/FM systems with reactive interfaces, ranging from the exchange bias mechanism, 14,18 to the influence of structure and stoichiometry on the magnetic properties, 19 to the realization of peculiar magnetic configurations, like vortices. 20 Very recently, we have demonstrated that it is possible to prepare a CoO/Fe(001) interface characterized by the absence of any Fe oxide, 21,22 which is a quite unique feature with respect to the common experimental situations. 10,19,23 This result has been accomplished by exploiting an ultra-thin Co buffer layer with a bct cubic structure. 21,24 In that case, the CoO films were also a) Currently at Institute of Applied Physics, TU Wien, Vienna, Austria b) Electronic mail: alberto.brambilla@polimi.it characterized by a well-ordered mesa mound morphology for CoO thicknesses above a few monolayers (ML), occurring on account of stress relaxation through the formation of a network of misfit dislocations. 25,26 In this Letter, we explore the magnetic p...

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Interface-induced room-temperature multiferroicity in BaTiO3

Cited by 357 publications

References 48 publications

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

Electric in-plane polarization in multiferroic CoFe2O4/BaTiO3 nanocomposite tuned by magnetic fields

Magnetic anisotropy at the buried CoO/Fe interface

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