Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

Sun, Bo; Jiang, Denghui; Luo, Xiao; Xu, Zhongying; Zhong, Pei; Li, Lianhe; Wu, Rongchang

doi:10.1063/1.126498

Cited by 62 publications

(30 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These properties indicate that the luminescence emission results from the recombination between spatially separated electrons and holes. So it has been shown by Sun et al [13] that nitrogen incorporated in GaAs induces a sufficiently small perturbation to the valence band. In fact the electron is localised in the GaAsN conduction band but the hole is localised in the GaAs valence band.…”

Section: Resultsmentioning

confidence: 97%

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties

Saidi

Hassen

Maaref

et al. 2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have investigated, by photoluminescence (PL), the optical properties of GaAs 1-x N x /GaAs epilayers and GaAs 1-x N x /GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy (MOVPE) on (001)-oriented GaAs substrates. Different behaviors have been observed for the bulk epilayer and for the QW structures, respectively: (i) a blue shift of the PL bands in both kinds of structures when increasing the excitation density, (ii) an S-shaped PL peak energy versus temperature dependence has been observed for the GaAsN epilayer but a usual behavior is obtained for the QWs. Based in these experimental results, we have suggested that the carrier recombination mechanisms in the epilayer and in the quantum well structure are different. An enhanced exciton-localization-like mode for the epilayer is observed.

show abstract

Section: Resultsmentioning

confidence: 97%

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties

Saidi

Hassen

Maaref

et al. 2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…These characteristics have been well documented in the past. [11][12][13] Under higher intensity pulsed excitation, the PL from the samples containing 2.8% nitrogen and layer thicknesses greater than 200 nm, changed radically. Above a certain threshold excitation intensity, several narrow, laser-like peaks appeared.…”

Section: Resultsmentioning

confidence: 99%

Epitaxially grown GaAsN random laser

Sun

Gál

Gao

et al. 2003

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

We have studied the photoluminescence properties of as-grown GaAs 1Ϫx N x epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d Ͼ200 nm͒ GaAs 0.972 N 0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We believe that high gain in combination with structural inhomogeneities that are evident in these GaAs 0.972 N 0.028 layers, can explain the random lasing in such epitaxial layers.

show abstract

“…We believe that the strong modification of the GaAs conduction band by nitrogen alloying leads to a type I configuration for GaAsN-GaAs quantum wells. An evidence for this configuration are the strong absorption features that were observed in GaAsN-GaAs quantum wells [3]. It could be argued that strain fields were not included in the alloy layer.…”

Section: Excitonic Parametersmentioning

confidence: 99%

“…What is important besides the exciton binding energy is the oscillator strength, which is in straightforward relation with the wavefunctions of the confined carriers. Comparison with [3] indicates a type I configuration. In quaternary GaInAsN alloys lattice-matched to GaAs, strain effect considerations are not required; due to the incorporation of indium, the configuration is definitively type I for such quantum wells.…”

Section: Excitonic Parametersmentioning

confidence: 99%

Exciton Binding Energies and Oscillator Strengths in GaAsN-GaAs Quantum Wells

Gil

Bigenwald

2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

We propose the first tentative calculation of exciton binding energies and oscillator strengths in GaAs 1--x N x -GaAs quantum wells with nitrogen contents below x = 0.05. Our model is based on the envelope function approximation and permits us to determine the excitonic properties of GaAs-GaAsN single quantum wells with a variational and self-consistent process for marginal type I or type II potentials due to the very small valence band offset for this combination. We conclude that this is a type I system. IntroductionMixed-anion III-V-N alloys are very promising candidates for optoelectronic devices operating in the 1.3 and 1.55 mm range, since small nitrogen contents are very efficient to reduce the gap of the III-V compound. As an impurity in ordinary GaP and GaAs semiconductors, nitrogen is known to induce one or several special conduction states. For the different doping levels there is a series of bound exciton lines in GaP. In GaAs, nitrogen introduces a state which is resonant in the conduction band at ambient pressure conditions but can be boosted into the band gap by application of hydrostatic pressure. At higher composition, hybridization of the nitrogen wavefunctions with the rest of the conduction band increases which produces an additional band. The theoretical problem of the interaction of the nitrogen atom with the rest of the Bloch states of the band structure of GaAs has been analyzed by many authors; a review can be found in [1]. These methods are purely theoretical approaches and are hopeless for experimentalists and device designers. This argument which holds for bulk III-V-N compounds is reinforced for quantum wells based on them. These drawbacks inspired us for proposing a different, heuristic approach. This approach is based on well-known symmetry arguments: nitrogen which substitutes the group V atom gives an a 1 impurity level which couples with the a 1 zone center folded states that are fully symmetric linear combinations of the contributions of the X or L conduction band extrema. The study of quantum wells is restricted to the fundamental conduction band potential line-up for which we make the approximation that the Bloch wavefunctions do not change from one layer to the other. Interactions with upper confined states are restricted to their influences on effective masses.

show abstract

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

Cited by 62 publications

References 13 publications

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties

Epitaxially grown GaAsN random laser

Exciton Binding Energies and Oscillator Strengths in GaAsN-GaAs Quantum Wells

Contact Info

Product

Resources

About

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

Cited by 62 publications

References 13 publications

Optical investigation of GaAs1−xNx/GaAs heterostructure properties

Optical investigation of GaAs1−xNx/GaAs heterostructure properties

Epitaxially grown GaAsN random laser

Exciton Binding Energies and Oscillator Strengths in GaAsN-GaAs Quantum Wells

Contact Info

Product

Resources

About

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties

Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties