Interaction of atomic hydrogen with the Si(100)2�1 surface

Lu, Huiru; Wang, X. D.; Bai, Chunli; Hashizume, T.; Sakurai, Takeshi

doi:10.1007/bf00332180

Cited by 6 publications

(1 citation statement)

References 43 publications

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“…3͑a͒. For the study of atomic hydrogen adsorption both on Si͑100͒ 39 and Ge͑100͒ 40 at low exposures, hydrogen atoms reside singly on top of the dimerized Si and Ge atoms, and bare Si and Ge atoms without H adsorption are imaged brightly. The STM images are the same as those of bright spots in Fig.…”

Section: A Initial Adsorption Geometries and Voltage-dependent Stm Imentioning

confidence: 99%

Adsorption configurations and thermal chemistry of acetylene on the Ge(100) surface

Kim¹,

Maeng²,

Lee³

et al. 2002

The Journal of Chemical Physics

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The adsorption structures and thermal desorption behavior of C 2 H 2 on Ge͑100͒ were studied in ultrahigh vacuum by scanning tunneling microscopy ͑STM͒ and temperature programmed desorption ͑TPD͒. The STM investigation revealed that, at low coverage, C 2 H 2 initially adsorbs onto the Ge͑100͒ surface with two types of configurations: ͑i͒ a diconfiguration on top of a single Ge-Ge dimer ͑on-top͒ and ͑ii͒ a tetra-configuration parallel to the dimer axes, bridging two neighboring Ge dimers (p-bridge͒. TPD measurements show that chemisorbed C 2 H 2 desorbs from Ge͑100͒ nondissociatively with two different desorption features, denoted as ␣ ͑520 K͒ and ␤ ͑560 K͒. In addition, it was found that the desorption of C 2 H 2 follows first order kinetics for both states and that the desorption energies of the ␣ ͑520 K͒ and ␤ ͑560 K͒ states are 1.3 and 1.4 eV, respectively. STM studies of the adsorption of C 2 H 2 at various Ge surface temperatures indicate that the ␣ and ␤ features correspond to the on-top and p-bridge configurations, respectively.

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Section: A Initial Adsorption Geometries and Voltage-dependent Stm Imentioning

confidence: 99%