Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

Back, Han Sol; Kim, Min Je; Baek, Jeong Ju; Kim, Do Hwan; Shin, Gyojic; Choi, Kyung Ho; Cho, Jeong Ho

doi:10.1039/c8ra09831j

Cited by 9 publications

(6 citation statements)

References 47 publications

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“…Various Si–N peak positions have been reported in the literature (summarized in Table S1). ,,,,, The variation in the position of the Si–N band is attributed to the local bonding geometry (near a Si–N bond) . We also obtained difference spectra for the FTIR spectra recorded before and after irradiation (Figure S2b).…”

Section: Resultsmentioning

confidence: 99%

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Sasaki

Sun

Kurosawa

et al. 2021

ACS Appl. Nano Mater.

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Gas barrier films are widely used in electronic and packaging applications. They are also critical components of flexible organic light-emitting diodes (FOLEDs) that require high gas barrier performance. Among the various film manufacturing techniques, solution-processed thin-film encapsulation (TFE) represents a low-cost FOLED fabrication method. The nanometerthick SiN films produced following the vacuum ultraviolet (VUV)-induced densification of solution-processed perhydropolysilazane (PHPS) films in a N 2 atmosphere can potentially serve as TFE barrier films. However, the nanometerthick PHPS densification process has not been examined in sufficient detail. We investigated and discussed the effects of the Si−N bond number, PHPS film composition, and free volume (present in the produced Si−N network) on the VUV-induced PHPS densification process. It was found that VUV irradiation caused rapid hydrogen release and film densification through the formation of Si−N bonds. The results obtained using the X-ray photoelectron spectroscopy and dynamic secondary ion mass spectrometry techniques, and the calculated residual hydrogen ratios, revealed that the film composition was strongly related to the number of residual hydrogen atoms and Si−N bonds. Notably, nanometer-thick PHPS film densification was a relatively slow process, in which the free volume in the Si−N network was considerably reduced by the atomic rearrangement induced by the simultaneous cleavage of several Si−N bonds during VUV irradiation. We believe that the results presented herein can potentially serve as a guideline for developing solution-processed nanometer-thick SiN films with relatively high density and excellent gas barrier performance (that is comparable to that exhibited by vacuum-processed barrier films).

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Section: Resultsmentioning

confidence: 99%

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Sasaki

Sun

Kurosawa

et al. 2021

ACS Appl. Nano Mater.

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“…Recently, perhydropolysilazane (PHPS), an inorganic polymer that consists of a Si–N skeleton and is free of organic groups, has demonstrated its superiority as a precursor for hard silica coating. − Due to its unique structure, PHPS can be converted into inorganic silica via a hydrolysis–condensation process assisted by heating or a photolysis–oxidation reaction induced by deep ultraviolet (DUV) light with a wavelength below 220 nm . This conversion condition is coincident with abundantly existing high-energy UV light in the LEO, which inspired us to utilize a UV and AO synergistic effect to obtain an inorganic silica coating from PHPS.…”

Section: Introductionmentioning

confidence: 99%

Flexible Hard Coatings with Self-Evolution Behavior in a Low Earth Orbit Environment

Wang

Ma²,

et al. 2021

ACS Appl. Mater. Interfaces

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Lightweight, long lifetime, and flexible polymer membrane-based structures, which are tightly folded on the ground and then unfolded in space, suffer from repeated bending before launching and fatal erosion on exposure to atomic oxygen (AO) in a low Earth orbit (LEO). Although various AO-resistant coatings have been developed, a coating that can simultaneously meet the critical requirements for the mechanical robustness and long-term protection of polymer membranes is rare. Here, we fabricated a coating with mechanical robustness and long-term space endurance, starting from an inorganic polymer precursor. A hybrid coating with a nanoscale polymer/silica bicontinuous phase is first prepared on the ground, which exhibits outstanding flexibility and excellent abrasion resistance. Then, the coating shows an in situ self-evolution behavior under AO and ultraviolet (UV) synergism to afford dense and crack-free silica coating with outstanding endurance. Our strategy displays great potential for protecting deployable membrane structures serving in the LEO.

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“…17,18 Thanks to its unique structure, PHPS can be converted into SiO x with versatile processes, such as high temperature 19 and exposure to ammonia vapor 20 prepare SiO x films from PHPS, which involves a photocleavage reaction of Si−N bonds in PHPS and subsequent oxidation reaction of the as-formed Si radicals. 22 Unlike the traditional sol−gel process, the conversion from PHPS into SiO x via VUV irradiation does not undergo hydrolysis and condensation procedure. The achieved SiO x film exhibits excellent compactness and gains attention as a gas-barrier layer as well as spin-on dielectrics (SOD).…”

Section: Introductionmentioning

confidence: 99%

“…Recently, perhydropolysilazane (PHPS), an inorganic polymer with repeat unit of [−SiH 2 –NH−], has been emerging as an ideal SiO x source for the solution process and already found applications in silicon-based semiconductor electronics. , Thanks to its unique structure, PHPS can be converted into SiO x with versatile processes, such as high temperature and exposure to ammonia vapor and H 2 O 2 solution . More recently, vacuum ultraviolet (VUV) irradiation has been successfully proved as an efficient method to prepare SiO x films from PHPS, which involves a photocleavage reaction of Si–N bonds in PHPS and subsequent oxidation reaction of the as-formed Si radicals . Unlike the traditional sol–gel process, the conversion from PHPS into SiO x via VUV irradiation does not undergo hydrolysis and condensation procedure.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike the traditional sol–gel process, the conversion from PHPS into SiO x via VUV irradiation does not undergo hydrolysis and condensation procedure. The achieved SiO x film exhibits excellent compactness and gains attention as a gas-barrier layer as well as spin-on dielectrics (SOD). , Therefore, PHPS provides distinct possibility to prepare a SiO x active layer at room temperature for flexible RRAMs. However, there has been barely any report about flexible RRAMs prepared with PHPS.…”

Section: Introductionmentioning

confidence: 99%

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Room-Temperature, Solution-Processed SiO_x via Photochemistry Approach for Highly Flexible Resistive Switching Memory

Wang

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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Due to its high versatility and cost-effectiveness, solution process has a remarkable advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing flexible resistive randomaccess memory (RRAM) devices. However, the reported solution-processed binary oxides, the most promising active layer materials for their compatibility with silicon-based semiconductor technology, commonly require high-temperature annealing (>145 °C) and the RRAMs based on them encounter insufficient flexibility. In this work, an amorphous and uniform SiO x active layer was prepared by irradiating an inorganic polymer, perhydropolysilazane, with a vacuum ultraviolet of 172 nm at room temperature. The corresponding RRAM showed typical bipolar resistance switching with a forming-free behavior. The device on polyimide film exhibited outstanding flexibility with a minimum bending radius of 0.5 mm, and no performance degradation was observed after bending 2000 times with a radius of 2.3 mm, which is the best among the reported solutionprocessed binary oxide-based RRAMs and can even rival the performance of PVD/CVD-based devices. This room-temperature solution process and the afforded highly flexible RRAMs have vast prospects for application in smart wearable electronics.

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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

Abstract: We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

Cited by 9 publications

References 47 publications

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Flexible Hard Coatings with Self-Evolution Behavior in a Low Earth Orbit Environment

Room-Temperature, Solution-Processed SiO_x via Photochemistry Approach for Highly Flexible Resistive Switching Memory

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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

Abstract: We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

Cited by 9 publications

References 47 publications

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation

Flexible Hard Coatings with Self-Evolution Behavior in a Low Earth Orbit Environment

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

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Product

Resources

About

Room-Temperature, Solution-Processed SiO_x via Photochemistry Approach for Highly Flexible Resistive Switching Memory