Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

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Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

Cited by 3 publications

References 14 publications

Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm

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