Superlattices and Microstructures volume 40, issue 4-6, P219-224 2006 DOI: 10.1016/j.spmi.2006.07.032 View full text
J. Arokiaraj, C.B. Soh, X.C. Wang, S. Tripathy, S.J. Chua

Abstract: A process methodology has been adopted to bond GaN thin films to Si(100) substrates using the combination of laser lift-off and direct wafer fusion. Using optimum excimer laser conditions, 2-10 µm of GaN is lifted-off from sapphire. The lifted-off thin film is cleared from gallium residual and then suitably treated in a hydrofluoric, nitric and acetic acid mixture to render the surface hydrophilic. This treatment provides van der Waals bonds to immediately contact bond with SiO 2 -Si(100) substrate at room te…

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