“…This is because excessive addition of C 6 H 2 (NH 2 ) 4 ·4HCl material has an adverse effect on the normal growth of crystals in the FA 0.75 MA 0.25 SnI 3 perovskite film, leading to an unnecessary phase separation. 47,48 Combined with previous related studies, we believe that excessive use of C 6 H 2 (NH 2 ) 4 ·4HCl additive will cause mutual inhibition of different crystal phases in perovskite during the growth process, ultimately leading to a large number of pinholes during the crystallization process. Phase separation can trigger unwanted carrier recombination centers, thereby affecting carrier transport within the film.…”