Innovative Smart Cut™ Piezo On Insulator (POI) Substrates for 5G acoustic filters

Butaud, E.; Ballandras, S.; Bousquet, Marie; Drouin, Alexis; Tavel, B.; Huyet, Isabelle; Clairet, Alexandre; Bertrand, Isabelle; Ghorbel, Aymen; Reinhardt, Alexandre

doi:10.1109/iedm13553.2020.9372020

Cited by 39 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A 4-in single-crystal LiNbO 3 /SiC heterogeneous substrate was fabricated using the ion-slicing technology [42], [43]. First, helium ions (He + ) were implanted into an X-cut LiNbO 3 wafer to form a damaged layer below the surface of the wafer.…”

Section: A Fabrication Process and Measurementsmentioning

confidence: 99%

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Zheng,

Zhang,

et al. 2024

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

This work demonstrates a group of longitudinal leaky surface acoustic wave (LL-SAW) resonators and filters using thin-film X-cut lithium niobate on silicon carbide (LiNbO 3 /SiC). An improved design that exploits a nonstandard reflector (NSR) structure to suppress the lateral overtone spurious mode in the LL-SAW response is demonstrated. The fabricated resonators show scalable resonant frequencies from 3.75 to 4.95 GHz, admittance ratios (ARs) between 56.0 and 64.1 dB, and large k 2 t between 18.3% and 20%. The fabricated filter with a center frequency of 4.84 GHz shows a minimum insertion loss (IL) of 0.88 dB, an out-of-band rejection of 26 dB, and a 3-dB bandwidth (BW) of 457 MHz, partially covering the fifth-generation (5G) N79 band. The filter design tradeoff between SH mode suppression and BW is also demonstrated. The results herein show the great potential of LL-SAW technologies using LiNbO 3 /SiC substrate for commercial applications in 5G new radio (NR) and Wi-Fi 5/6 bands.

show abstract

Section: A Fabrication Process and Measurementsmentioning

confidence: 99%

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Zheng,

Zhang,

et al. 2024

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…The widely used electrodes and substrates are discussed. Regarding the SAW, insulative substrates are often adopted [144]. Silicon [145,146] and sapphire [147][148][149][150] are the two commonly used substrates.…”

Section: Electrodes and Substratesmentioning

confidence: 99%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

View full text Add to dashboard Cite

Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

show abstract

“…LN or LT) bonded on a support substrate while having an acoustic reflector in between so that significant acoustic impedance mismatch can be attained. Note that this kind of multilayer structure was only enabled recently thanks to the advancement in micro-fabrication techniques in making piezoelectric single-crystal thin film with precisely controlled thickness by means of smart cutting or mechanical polishing [6,7]. Takai et al reported a multilayer SAW device with LT/SiO 2 /AlN layers on a Si support substrate [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of spurious mode suppression in 3.8 GHz shear-horizontal mode surface acoustic wave resonators based on LiNbO₃/SiO₂/Si multilayer structure

Tu,

Zhang,

Zhang

et al. 2024

J. Micromech. Microeng.

View full text Add to dashboard Cite

LiNbO3(LN)/SiO2/Si multilayer structure has recently attracted much attention due to its superior performance in realizing wideband radio frequency (RF) acoustic filters. However, the spurious modes, which is commonly found in LN-on-insulator (LNOI) resonators, often cause in-band ripples and deteriorated out-of-band suppression level. Though much research work has been done in suppression of spurious modes in LNOI resonators operating in below-3GHz region, little has been reported for the over-3GHz devices. This work investigates the spurious mode suppression techniques for a 3.8-GHz -shear horizontal (SH) mode 36ºYX-LNOI SAW device based on LN/SiO2/Si multilayer structure. Specifically, we explored different techniques based on apodized electrodes, dummy electrodes and double busbar structure. The measured results show that the effect of spurious mode suppression can be improved by combining the benefits of these techniques, which provides a promising solution for designing spurious-free LNOI SAW resonators operating above 3 GHz.

show abstract

Innovative Smart Cut™ Piezo On Insulator (POI) Substrates for 5G acoustic filters

Cited by 39 publications

References 6 publications

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Investigation of spurious mode suppression in 3.8 GHz shear-horizontal mode surface acoustic wave resonators based on LiNbO₃/SiO₂/Si multilayer structure

Contact Info

Product

Resources

About

Innovative Smart Cut™ Piezo On Insulator (POI) Substrates for 5G acoustic filters

Cited by 39 publications

References 6 publications

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO3/SiC Substrates

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO3/SiC Substrates

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Investigation of spurious mode suppression in 3.8 GHz shear-horizontal mode surface acoustic wave resonators based on LiNbO3/SiO2/Si multilayer structure

Contact Info

Product

Resources

About

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO₃/SiC Substrates

Investigation of spurious mode suppression in 3.8 GHz shear-horizontal mode surface acoustic wave resonators based on LiNbO₃/SiO₂/Si multilayer structure