Innovative nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition

“…However, the passivation by conventional plasma-enhanced chemical vapor deposition (PECVD) and high-density inductively coupled chemical vapor deposition (ICPCVD) induces slight decreases of both I D.max and g m because of damage occurring during the passivation process, thereby also degrading RF performance. 5,6) In this paper, in order to reduce the effects of surface traps on the barrier layer, Si 3 N 4 layer passivation with low damage by remote PECVD is utilized, which might suppress the formation of surface traps in the side-recessed region. The fabricated 100 nm MHEMT's with the passivated Si 3 N 4 layer exhibited excellent characteristics such as a maximum extrinsic transconductance (g m.max ) of 740 mS/mm and a cut off frequency ( f T ) of 210 GHz.…”