InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition

Abstract

InN nanocolumns were grown on a gold-coated Si(111) substrate by metal-organic chemical vapor deposition (MOCVD). Herein, indium predeposition was performed before InN nanocolumn growth. The InN nanocolumns were obtained by forming Au+In solid solution droplets on the Au-coated substrate and subsequently nitriding these droplets. In this study, we investigated the morphological properties of InN nanocolumns by changing the growth conditions such as growth temperature, trimethylindium (TMI) flow rate, and growth pressure. Scanning electron microscopy (SEM) showed that the InN nanocolumns were hexagonal with diameters ranging from 90 to 180 nm and a length of approximately 2.5 mm. The Raman spectrum of the InN nanocolumns showed peaks at 492 and 596 cm À1 , which were assigned to E 2 and A 1 longitudinal optical (LO) phonon modes of InN, respectively. From the high-resolution X-ray diffraction (HR-XRD) spectrum, the predominant diffraction pattern from the InN(101) plane was observed at 33.215 .

Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

“…InN nanostructures such as nanowires, nanotubes, and nanocolumns have attracted considerable attention because the quantum confinement effect may yield novel functions and improved performance [20]. Lee et al [21] reported the predeposition of In before the growth of InN nanocolumns; InN nanocolumns were obtained by forming droplets of Au + In solid solution on Au-coated substrates following by nitriding these droplets.…”