Injection technique for the study of solar cell test structures

Ciach, R.; Dotsenko, Yu. P.; Naumov, V. V.; Shmyryeva, A.N.; Смертенко, П. С.

doi:10.1016/s0927-0248(02)00271-4

Cited by 35 publications

(27 citation statements)

References 8 publications

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“…In all cases except the one when the thickness of the HfO 2 interlayer (d) is 2.5 nm, there is the restriction of the current imposed by the contact emission at high bias (> 1 V). The evidence of this is the value of α: in these cases α ≤ 1 [16]. Only the case with d = 2.5 nm shows the values of α = 1.5 at high bias, corresponding to the bimolecular recombination when concentration of major (n) and minor (p) charge carriers is almost equal [16,33,34].…”

Section: Resultsmentioning

confidence: 96%

“…The evidence of this is the value of α: in these cases α ≤ 1 [16]. Only the case with d = 2.5 nm shows the values of α = 1.5 at high bias, corresponding to the bimolecular recombination when concentration of major (n) and minor (p) charge carriers is almost equal [16,33,34]. So, there is the thickness of HfO 2 layer d = 2.5 nm, which favors a good injection of both types of charge carriers into the ZnO lm.…”

Section: Resultsmentioning

confidence: 99%

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Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

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The ZnO-based Schottky diodes revealing a high recti cation ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high recti cation ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The in uence of these approaches on the diode's recti cation ratio together with modeling based on the di erential approach and thermionic emission theory are presented.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

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“…2 (a)). This corresponded to a super-high double injection [8]. For the reverse current of the wafer 1, the α-V dependence had the region with α ∼ 1.25 that corresponded to a regime of a low injection (Fig.…”

Section: Wwwpss-ccommentioning

confidence: 85%

“…2 (b)). At high reverse bias, α ∼ 1 that could be approximated by Ohm law and regime of a low injection [8]. All time dependences of the leakage current density measured for a large number of the In/CdTe/Au diodes can be distinguished as three types (Fig.…”

Section: Wwwpss-ccommentioning

confidence: 92%

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Defect formation in CdTe during laser‐induced doping and application to the manufacturing nuclear radiation detectors

Gnatyuk

Aoki

Hatanaka

et al. 2006

Phys. Status Solidi (c)

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The peculiarities of electrical properties of In/CdTe/Au diodes, fabricated by the laser-induced doping procedure, have been studied. The measurements of time dependences of reverse biased current of a great number of different samples revealed three types of the leakage current density variations with time. These variations were attributed to proper CdTe defects as well as point and extended defects generated in the act of laser-induced doping of CdTe wafers and following fabrication of pixel detectors. The optimal conditions of laser-induced In-doping of CdTe wafers and formation of electrodes were elaborated. The fabricated detectors had sharp I-V characteristics with a low leakage current, possessed a high energy resolution at room temperature and showed promise for nuclear radiation imaging devices.

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Interface Engineering for Both Cathode and Anode Enables Low‐Cost Highly Efficient Solution‐Processed CdTe Nanocrystal Solar Cells

Rong

Guo

Lian

et al. 2019

Adv Funct Materials

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Low‐cost solution‐processed CdTe nanocrystal (NC) solar cells always suffer from a high interface energy barrier and unbalanced hole/electron transport as well as anisotropic atom diffusion on the CdTe surface due to the limited amount of hole/electron interface materials or the difficulty in interface processing. In this work, a novel strategy is first adopted with gradient electron transport layer (CdS/CdSe) modification in the cathode and a new crosslinkable hole transport polymer (P‐TPA) implantation in the anode. The carrier recombination at interfaces is greatly decreased and thus the carrier collection is increased. Moreover, the light harvesting is improved both in short and long wavelength regions, making Jsc and Voc increase simultaneously. A champion solar cell shows a very high power conversion efficiency of 9.2% and an outstanding Jsc of 25.31 mA cm−2, which are among the highest values for all solution‐processed CdTe NC solar cells with a superstrate structure, and the latter value is even higher than that of traditional thick CdTe thin‐film solar cells (2 µm) via the high temperature close space sublimation method. This work demonstrates that facile surface modifications in both the cathode and anode with stepped extraction and organic–inorganic hybridization are very promising in constructing next‐generation highly efficient NC photovoltaic devices.

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Injection technique for the study of solar cell test structures

Cited by 35 publications

References 8 publications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

Defect formation in CdTe during laser‐induced doping and application to the manufacturing nuclear radiation detectors

Interface Engineering for Both Cathode and Anode Enables Low‐Cost Highly Efficient Solution‐Processed CdTe Nanocrystal Solar Cells

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