InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Moriya, Paulo Hisao; Casula, Riccardo; Chappell, George A.; Parrotta, Daniele C.; Ranta, Sanna; Kahle, Hermann; Guina, Mircea; Hastie, Jennifer E.

doi:10.1364/oe.416210

Cited by 12 publications

(3 citation statements)

References 43 publications

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“…This is relevant since the excess noise in the phase of the OPO pump source is detrimental to the continuous-variable entanglement that can be generated in above threshold OPOs [41]. As well as a reduction in quantum phase noise, ultra-narrow fundamental linewidths can also be reached, with sub-kHz linewidths having already been recently demonstrated within our research group [17,42,43], where identical AlGaInP-based VECSEL samples were utilized. While the degree of intensitydifference squeezing that can be achieved should be irrespective of the quantum phase noise and narrow linewidth operation of the OPO pump source, for a given low intensity noise, reducing these characteristics can still open up new possibilities and applications in e.g., atomic clocks [44], and quantum communication [45], cryptography [46], spectroscopy [47,48] and computing [49].…”

Section: Discussionmentioning

confidence: 99%

Single-frequency optical parametric oscillator intracavity-pumped by a visible VECSEL for low-noise down-conversion to 1.55 µm

Anderson,

Moriya,

Caspani

et al. 2023

Preprint

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We report, to the best of our knowledge, the first optical parametric oscillator (OPO) pumped by a visible AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL). Tunable emission over 1155–1300 nm in the signal and 1474–1718 nm in the idler are observed by temperature adjustment of a 40 mm-long 5%-MgO:PPLN crystal intracavity-pumped at 690 nm. When optimized for low oscillation threshold, and by implementing resonant idler output-coupling (Toc = 1.7%), extracted output powers of 26.2 mW (signal) and 5.6 mW (idler; one-way) are measured, corresponding to a total down-conversion efficiency and extraction efficiency of 70.2% and 43%, respectively. Further, a total down-conversion efficiency of 72.1% is achieved in the absence of idler output-coupling. Of particular interest for high-precision applications, including quantum optics experiments and squeezed light generation, high stability and single-frequency operation are also demonstrated. We measure RMS stabilities of 0.4%, 1.8% and 2.3% for the VECSEL fundamental, signal and idler, with (resolution-limited) frequency linewidths of 2.5 MHz (VECSEL) and 7.5 MHz (signal and idler).

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Section: Discussionmentioning

confidence: 99%

Single-frequency optical parametric oscillator intracavity-pumped by a visible VECSEL for low-noise down-conversion to 1.55 µm

Anderson,

Moriya,

Caspani

et al. 2023

Preprint

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“…Acknowledgment. Data related to this publication have been made available at the University of Strathclyde data repository [47].…”

Section: Discussionmentioning

confidence: 99%

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Moriya

Casula

Parrotta

et al. 2020

Frontiers in Optics / Laser Science

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We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM 00 ) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <−130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

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“…[12] ∼ 450 nm 689 nm 270 mW 22°C Diam. 500 µm 2021 [22] pumped via several GaN-based laser diodes emitting at ∼ 450 nm. Up to 270 mW of output power was reached at a heat sink temperature of T hs = 22°C.…”

Section: Introductionmentioning

confidence: 99%

Membrane external-cavity surface-emitting lasers (MECSELs) optimized for double-side-pumping: a first fundamental single-side pumping characterization

Mikitta,

Cutuk,

Jetter

et al. 2024

Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII

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Membrane external-cavity surface-emitting lasers (MECSELs) are a new kind of vertically-emitting semiconductor laser with enormous potential and versatility for tailoring the laser parameters. Part of their benefits is related to the fact that they do not need to employ integrated distributed Bragg reflectors (DBRs), which are known to hamper the heat transfer and limit wavelength versatility via strain and band-gap engineering constraints. Furthermore, the substrate on which the active region is grown on is removed and the resulting thin active region membrane is sandwiched between transparent intra cavity (IC) heat spreaders for improved thermal management. Initial characterization of room temperature operation of a new red-emitting AlGaInPbased structure design containing 40 quantum wells (QWs) will be presented. Further, the main aspects of the design of active region membranes will be reviewed with respect to double-side pumping possibilities enabled by the absence of a DBR and the substrate. The comparably high cavity losses show future potential of a properly double-side pumped gain structure.

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InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Cited by 12 publications

References 43 publications

Single-frequency optical parametric oscillator intracavity-pumped by a visible VECSEL for low-noise down-conversion to 1.55 µm

Single-frequency optical parametric oscillator intracavity-pumped by a visible VECSEL for low-noise down-conversion to 1.55 µm

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Membrane external-cavity surface-emitting lasers (MECSELs) optimized for double-side-pumping: a first fundamental single-side pumping characterization

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