MRS Proc. 1998 DOI: 10.1557/proc-551-69 View full text
Navid S. Fatemi, David M. Wilt, Richard W. Hoffman, Victor G. Weizer

Abstract: AbstractOne of the critical components in a thermophotovoltaic (TPV) system is the infrared-sensitive photovoltaic (PV) semiconductor device that converts the emitted radiation to electricity. Currently, several semiconductor material systems are under development by various workers in the field. The most common are InGaAs/InP, GaSb, and InGaSbAs/GaSb. These devices normally have electronic energy bandgap values in the range of 0.50-0.74 eV. In addition, the design and structure of these devices fall into two …

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