Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films

Abstract

The effects of annealing on the structural properties of radio-frequency sputtered amorphous silicon carbide films prepared under different hydrogen partial pressures (PH) were investigated. Infrared (IR) results of the as-prepared films suggest that as PH increases, more hydrogen is incorporated into the film to form the Si–H and C–H bonds and less silicon and carbon atoms are available to form the Si–C bonds. X-ray photoelectron spectroscopy (XPS) results of the as-prepared films agree with the IR results in that the percent of Si–C decreases and the percent of Si–H and C–H increases as PH increases. IR and XPS results of the annealed films suggest that as the annealing temperature increases, the dangling Si and C bonds will combine to form the Si–C bonds for the unhydrogenated samples. The increase in Si–C bonds for the hydrogenated samples is more likely to be due to the formation of Si–C bonds from the breaking up of the Si–H and C–H bonds.

Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

“…For the stretching vibration mode of Si-C bond, A is 2.13 × 10 19 cm −2 . We can calculate the Si-C bond density according to the FT-IR spectra, [11]. Fig.…”

A Si/C nanocomposite anode by ball milling for highly reversible sodium storage

“…5a) are assigned to Si 0 and Si n+ , where the binding energies in between correspond to SiO x (0 < x < 2) [24][25][26] (Fig. 5c), suggesting that the grinding could alter the chemical bonding states of Si [27][28][29]. The chemical bonds of Si-C appear (Fig.…”

Influence of annealing time on microstructure of one-dimensional Ga2O3 nanorods

“…2(a) shows the general scan in the binding energy, ranging from 0 eV to 1100 eV with the main components being Ga, C, and O with XPS peaks at the location of Ga3d (19.9 eV), Ga3p 3/2 (1117.9 eV), Ga2p 1/2 (1144.7 eV), and O1s (531.0 eV). The percentage of elements is calculated according to the formula [14] as follows:…”