Influence of the gate and dielectric thickness on the electro-optical performance of SRO-based LECs: Resistive switching, IR and deep UV emission

Cabañas-Tay, S.A.; Palacios-Huerta, L.; Aceves-Mijares, M.; Alvarez-Quintana, J.; Pérez‐García, Sergio Alfonso; Domínguez-Horna, C.; Morales–Sánchez, A.

doi:10.1016/j.jlumin.2017.08.034

Cited by 13 publications

(5 citation statements)

References 26 publications

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“…This is the maximum current that can be generated by the absorbed light in a photodiode or any photodetector. However, the transduction of light in silicon present losses due to recombination processes, and only a portion of the generated electron-hole pairs end up contributing to the detectable current Iopt, which always is lower than Iph, depending on the quantum efficiency η as indicated in (7):…”

Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

“…Using (7), we can obtain j opt , which is the photocurrent density generated in the substrate within the space charge region. This current can be simplified into (11):…”

Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

“…In the past few years, the development of silicon light sources has advanced significantly, and integration of such devices into electrophotonic circuits has been demonstrated [3][4][5][6][7][8]. However, one of the major challenges to tackle remains the improvement of their relatively low light emission powers [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2022

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This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications.

show abstract

Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

“…Using (7), we can obtain j opt , which is the photocurrent density generated in the substrate within the space charge region. This current can be simplified into (11):…”

Section: Energy Bands Under Illumination Conditionmentioning

confidence: 99%

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Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2022

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“…There have been several types of ACFs reported. The films that conduct electricity along the thickness direction of the film are known as type I ACFs [24], and films that conduct in two perpendicular directions on the surface are defined as type II ACFs [25]. Based on the reports, the type II aeolotropic conductive materials are still in the stage of laboratory exploration.…”

Section: Introductionmentioning

confidence: 99%

2D double aeolotropic conductive Janus pellicle with multi-functionality then derived 3D dual-wall Janus-type tube

Qi¹,

Do²,

Xie³

et al. 2020

Express Polym. Lett.

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bilayer Janus pellicle (denoted as BJP) of concurrent double aeolotropic electrical conduction, superparamagnetism and luminescence is designed and constructed via electrospinning by using one-dimensional (1D) nanofibers and Janus nanoribbons as constructive units. The BJP comprises top-down two layers tightly bonded together. The top layer is a left-right structured Janus film which consists of Janus nanoribbons array as left and right side, and further, arrangement orientations of Janus nanoribbons in the two sides are perpendicular, leading to double aeolotropic conduction, and the conduction ratio reaches 10 8 times. The down layer is a non-array luminescent film made of nanofibers. Under the excitation by 291 and 294 nm light, red luminescence of the left side of the top layer and green luminescence of down layer in BJP are respectively achieved. The maximum saturation magnetization of the top layer can reach 21.45 (emu/g). By rolling the 2D BJP into the tube respectively with the ways of rolling from left to right or from up to down, three-dimensional (3D) dual-wall Janus-type tube with the Janus-type tube as outer or inner and the homogeneous tube as inner or outer is obtained.

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“…At present, anisotropic conductive materials [1][2][3][4] are a research hotspot, and two kinds of anisotropic conductive film (ACF) have been reported. One of the films is conductive along the film thickness direction and insulative along other directions, which is defined as type I ACF [5][6][7]. The other kind of conductive film comprises orientationally arranged nanofibers and conducts in two vertical orientations on the film surface, which is called type II ACF [8,9].…”

Section: Introductionmentioning

confidence: 99%

Di-anisotropic conductive Janus-type film endued with super-paramagnetism and enhancive red fluorescence

Qi¹,

Ma²,

Xie³

et al. 2020

J. Phys. D: Appl. Phys.

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Fluorescent–conductive–magnetic multifunctional materials have wider applications than their counterpart single-functional materials. In this work, a newflexible twi-layer Janus-type film (TJF) with concurrence of di-anisotropic electrical conduction, super-paramagnetism and red fluorescence is designed and constructed via electrospinning. The unique TJF consists of two up-to-down layers closely bonded together; the up layer is an easily prepared non-array super-paramagnetic Fe3O4/polyvinylpyrrolidone nanofiber pellicle. The down layer is a Janus-type membrane with a left–right structure consisting of (polymethylmethacrylate (PMMA)/Eu(BA)3phen)║(PMMA/polyaniline (PANI)) Janus nanobelt arrays respectively used as the left and right halves. The conductive directions in the two halves are vertical, and the same is true with the insulative orientations, resulting in di-anisotropic conduction. The fluorescent color of the down layer is red under UV irradiation. In order to ensure high conductive anisotropy and enhancive red fluorescence, an exceptional Janus nanobelt is designed and applied as a conductive and building unit to construct the down layer. The critical thickness of the twi-layer multifunctional film is a vital parameter and studied for the first time. When the thickness of the up layer is determined, a corresponding critical thickness of the down layer will exist, and when the thickness of the down layer is fixed, a critical thickness of the up layer will also exist. No fewer than the critical thickness, the fluorescence properties of the down layer are not affected by the up layer. In this work,three kinds of special Janus structures are used to separate and confine different materials in their own domains at the microscopic and macroscopic levels, and microscopic and macroscopic partitions are simultaneously realized in TJF, leading to TJF with superior performance. Furthermore, TJF has excellent mechanical anisotropy. This work provides guidance for exploring the critical thickness and mutual effects of multi-layer multifunctional film.

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Influence of the gate and dielectric thickness on the electro-optical performance of SRO-based LECs: Resistive switching, IR and deep UV emission

Cited by 13 publications

References 26 publications

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2D double aeolotropic conductive Janus pellicle with multi-functionality then derived 3D dual-wall Janus-type tube

Di-anisotropic conductive Janus-type film endued with super-paramagnetism and enhancive red fluorescence

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