volume 147, issue 2-3, P200-204 2008
DOI: 10.1016/j.mseb.2007.08.016
View full text
Sign up to set email alerts

Abstract: AbstractMultilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and Si0 2 onto Si wafers (in a single run at 390 °C and 50mTorr, using GeH 4 , Si 2 H 6 and 0 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures rangin…

Expand abstract