Influence of sputtering parameters on crystalline structure of ZnO thin films

Characteristics of sputtered zinc-oxide films prepared by UBM sputtering for thin film transistors

“…This value is very close to that of the standard ZnO crystal (34.4°). This indicates that all of the films obtained had a preferred orientation with the c-axis perpendicular to the substrate [8,9]. Thus, the preferred orientation of the (002) direction peak became more intense and sharper with the increase of RF power.…”

“…ZnO films are an attractive wide and direct band gap oxide semiconductor with a hexagonal wurzite structure, a wide band gap, and optical properties [1][2][3][4][5][6][7][8][9]. Thus, ZnO films have many potential applications in optoelectronic devices, such as thin film gas sensors, light emitting diodes (LEDs) [1], surface acoustic wave (SAW) filters, film bulk acoustic resonators (FBARs), thin film transistors (TFTs) [2,3], and CIGS solar cells [4].…”

“…Various deposition methods, such as sputtering, chemical vapor deposition (CVD), ion beam sputtering [1], atomic layer deposition (ALD) [3], and pulse laser deposition (PLD) [5] have been used to fabricate ZnO thin films. RF magnetron sputtering is the most widely used method [2,4,[6][7][8][9]. Its advantages include a low deposition temperature, high growth rate, and large area deposition.…”

Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering

“…Our previous studies on un-doped ZnO films (chemo-resistive films for gas sensing and piezoelectric high resistive films for SAW sensors and micro-actuators), laid the groundwork for current experiments (Tvarozek et al, 2007). The experiments of Yao et al, mentioned in the previous part (Yao et al, 2007), provided evidence of successful p-doping using N 2 source.…”

Zinc Oxide — A Unique Material for Advanced Photovoltaic Solar Cells

“…A total energy flux density, by other words power density E Φ , can be expressed by microscopic quantities known from the kinetic theory of gases, lowtemperature plasma physics and the models of sputtering processes. It can be also estimated by macroscopic sputtering parameters like supply RF power, deposition rate, average DC voltage induced on target, flow or pressure of working gases, substrate bias voltage or power [5]. The substrate temperature is normalized to the melting temperature T m of sputtered material, T s /T m .…”