Influence of plasma heating of wafer substrates on SiO2 deposition rate in a TEOS/O2 high-density plasma CVD system

Sputter-assisted plasma CVD of wide or narrow optical bandgap amorphous CNx:H films using i-C4H10/N2 supermagnetron plasma

“…it is higher than that of the glass substrate. The reason is the irradiation of visible and ultraviolet rays from the high-density plasma generated over the upper electrode [15]. The optical bandgap (1.1 eV) of Si is significantly smaller than that of SiO 2 (around 4 eV).…”

“…The phase difference (Δϕ) between two rf voltages was fixed at 180°. For this phase difference, the plasma density became higher in comparison with usual single rf power magnetron plasma [15]. It means the supermagnetron plasma is a high-density plasma suited to the high-rate film deposition by sputter-assisted plasma CVD.…”

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN<sub>x</sub>:H Films Formed by Supermagnetron Plasma CVD

“…The upper electrode was covered with a graphite plate to prevent sputtering on the metal electrode surface. The phase difference between the two RF voltages was approximately 180˚ under a control-of-phase shifter to obtain both the maximum plasma density [30] [31] [32] and deposition rate. In addition, a rotating magnetic field (approximately 80 G) was applied parallel to the two electrode surfaces.…”

Field-emission characteristics of diamond-like amorphous carbon films deposited by mixed gas (N2 or H2) controlled i-C4H10 supermagnetron plasma

“…Two different rf power sources with the same rf frequency (13.56 MHz) were supplied to two electrodes with respect to the grounded metal chamber [18]. The lower electrode (i.e., substrate stage) was heated to 100°C during DAC deposition.…”