Influence of Pd layer on the sensitivity of CHx/PS/Si as structure for H2 sensing

Gabouze, N.; Cheraga, H.; Belhousse, S.; Ghellai, N.; Zouadi, N.; Ouadah, Y.; Chabane-Sari, N.E.

doi:10.1002/pssa.200674368

Cited by 13 publications

(3 citation statements)

References 11 publications

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“…This is slightly different from the results obtained for PSi/CH x and PSi/CH x /Pd structures where the maximum sensitivity was observed at 30 [6] and 10 mV, respectively. [7] In the presence of cigarette smoke, a maximum sensitivity for the PSi/poly(3-hexylthiophene) structure was obtained at 10 mV (a in Fig. 5).…”

Section: Resultsmentioning

confidence: 98%

“…[5,6] It was demonstrated that the detection of hydrogen was improved by depositing a thin layer of palladium on the organic coating (CH x ). [7] In the continuation of our work on the use of PSi for gas sensing and to improve the stability and conductivity of the sensor, we propose the covalent grafting of organic conductive species such as conducting polymers onto the PSi surface. The choice of conductive polymers is essential in this application.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical grafting of poly(3‐hexylthiophene) on porous silicon for gas sensing

Belhousse

Boukherroub

Szunerits

et al. 2010

Surface & Interface Analysis

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The paper reports on the preparation of a porous silicon (PSi)/poly(3-hexylthiophene) hybrid structure and its application in gas sensing. The poly(3-hexylthiophene) was covalently grafted on the PSi surface in a stepwise process. Electropolymerizable thiophene groups were covalently linked to an azide-terminated PSi surface using 'click chemistry' approach. Poly(3-hexylthiophene) films were grown on the thiophene-terminated PSi interface using electropolymerization in acetonitrile in the presence of 3-hexylthiophene monomer.Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and electrochemical measurements were performed to follow the chemical composition and structural changes after each step.The sensitivity, response time and capacitance response of the device to gas environment have been investigated. The results show that current-voltage characteristics are modified by the presence of the gas, and the sensor displays a rapid and reversible response at room temperature.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Electrochemical grafting of poly(3‐hexylthiophene) on porous silicon for gas sensing

Belhousse

Boukherroub

Szunerits

et al. 2010

Surface & Interface Analysis

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“…In the H 2 pressure range, the palladium modified PS structure exhibits higher amplitude of (I) responses than that of the Pd/Si (Fig. 4) or CHx/PS/Si structures [1,12]. The difference between the hydrogen sensitivity of porous silicon with and without Pd can be explained by the model proposed by Rahimi et al [13].…”

Section: Resultsmentioning

confidence: 99%

Hydrogen Sensor: Effect of Palladium Thickness and Porous Structure of Silicon

Lachenani

Cheraga²,

Menari³

et al. 2009

MSF

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In the present work, the effect of palladium layers thickness and porous structure of silicon on the hydrogen gas sensor was studied. Hence, simultaneous Pd/CHx/PS/Si and Pd/Si structures have been used as a sensing material to detect H2 gas. Comparison with previous study on CHx/PS/Si structure allows to understanding the effect of pores in silicon material and the contribution of palladium in detection of the hydrogen. Current-voltage and capacitance-voltage characterizations show that the porous silicon structure (Pd/CHx/PS/Si) has higher sensitivity toward H2 gas than that exhibited by silicon sensor despite the presence of palladium (Pd/Si) in both structures. On the other hand, our experiments show that the presence of Pd metal decreases the dynamic response which increases the sensitivity of the sensor. This result conducts, us to optimize the thickness of deposited Pd layer, therefore different Pd layer thickness ranging from [10 nm to 50 nm] was studied. The feature of the best optimized Pd layer deposited on the surface has been characterized by scanning electron microscopy (SEM). Finally it appears that both the catalytic property of Pd metal and the presence of pores were found to strongly influence the sensor response in terms of hydrogen sensitivity and response time.

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Functional Coatings of Porous Silicon

Cunin

2014

Handbook of Porous Silicon

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Influence of Pd layer on the sensitivity of CH_x/PS/Si as structure for H₂ sensing

Cited by 13 publications

References 11 publications

Electrochemical grafting of poly(3‐hexylthiophene) on porous silicon for gas sensing

Electrochemical grafting of poly(3‐hexylthiophene) on porous silicon for gas sensing

Hydrogen Sensor: Effect of Palladium Thickness and Porous Structure of Silicon

Functional Coatings of Porous Silicon

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