Influence of nitrogen flow rates on materials properties of CrN x films grown by reactive magnetron sputtering

Subramanian, B.; Prabakaran, K.; Jayachandran, M.

doi:10.1007/s12034-012-0344-0

Cited by 27 publications

(12 citation statements)

References 28 publications

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“…In particular, N vacancies (V N ) and also N interstitials (I N ) are believed to be important point defects existing in TMN films grown by physical vapor deposition techniques [26,27]. Several groups have experimentally studied how the electronic and mechanical properties of CrN change due to nitrogen stoichiometry [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Role of N defects in paramagnetic CrN at finite temperatures from first principles

et al. 2015

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Simulations of defects in paramagnetic materials at high temperature constitute a formidable challenge to solid-state theory due to the interaction of magnetic disorder, vibrations, and structural relaxations. CrN is a material where these effects are particularly large due to a strong magnetolattice coupling and a tendency for deviations from the nominal 1:1 stoichiometry. In this work, we present a first-principles study of nitrogen vacancies and nitrogen interstitials in CrN at elevated temperature. We report on formation energetics, the geometry of interstitial nitrogen dimers, and the impact on the electronic structure caused by the defects. We find a vacancy formation energy of 2.28 eV with a small effect of temperature, i.e., a formation energy for N interstitial in the form of a 111 -oriented split bond of 3.77 eV with an increase to 3.97 at 1000 K. Vacancies are found to add three electrons, while split-bond interstitial adds one electron to the conduction band. The band gap of defect-free CrN is smeared out due to vibrations, although it is difficult to draw a conclusion about the exact temperature at which the band gap closes from our calculations. However, it is clear that at 900 K there is a nonzero density of electronic states at the Fermi level. At 300 K, our results indicate a border case where the band gap is about to close.

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Section: Introductionmentioning

confidence: 99%

Role of N defects in paramagnetic CrN at finite temperatures from first principles

et al. 2015

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“…The increase of the grain size with increasing the nitrogen flow rate can be explained by the fact that at higher nitrogen flow rates the expansion of plasma is less, thus decreasing the mobility of reactants and increasing the particle density. 13 The In 2 O 3 film deposited at 10% exhibits a highly-oriented columnar structure perpendicular to the surface of the glass substrate, as shown in Figure 2(g). The good cohesion between the In 2 O 3 thin film and the glass substrate is observed.…”

Section: Resultsmentioning

confidence: 96%

Effects of Nitrogen Flow Rate on the Properties of Indium Oxide Thin Films

Cho¹,

Kim²

2013

j. nanosci. nanotech.

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Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices.

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“…The atomic concentrations were determined after a background fitting was performed by applying the Shirley method to each survey spectrum. The atomic fraction for each element was calculated according with a procedure previously reported (Subramanian, Prabakaran, & Jayachandran, 2012) …”

Section: Methodsmentioning

confidence: 99%

Compositional and electrical properties of Cr, Nb, Cr/Nb, CrNbN, and CrN/NbN multilayers grown using the d.c. magnetron sputtering technique

Garzón-Fontecha

Castillo

Escobar-Rincón

et al. 2019

Surface & Interface Analysis

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Cr, Nb, Cr/Nb, CrNx, NbNx, CrNbN, and (CrN/NbN)n structures were produced on Si and glass substrates, using the d.c. magnetron sputtering technique. Compositional analysis, based on binding energies of Cr, Nb, and N, was carried out by means of X‐ray photoelectron spectroscopy (XPS). Through Auger electron spectroscopy (AES), depth profiles were obtained, allowing to demonstrate the multilayers production. Surface morphological characteristics, as roughness and grain size, were evaluated by atomic force microscopy (AFM), revealing very smooth surfaces, that is a consequence of the deposition parameters used in the synthetization experiments. Finally, for different configurations, conductivity measurements were carried out, revealing the influence of nitrogen content and temperature on electron transport. It was found that substoichiometric nitrides (CrN0.35 and NbN0.12) exhibited the highest conductivity, because the nitrogen atoms act as donor of electrons.

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Influence of nitrogen flow rates on materials properties of CrN x films grown by reactive magnetron sputtering

Cited by 27 publications

References 28 publications

Role of N defects in paramagnetic CrN at finite temperatures from first principles

Role of N defects in paramagnetic CrN at finite temperatures from first principles

Effects of Nitrogen Flow Rate on the Properties of Indium Oxide Thin Films

Compositional and electrical properties of Cr, Nb, Cr/Nb, CrNbN, and CrN/NbN multilayers grown using the d.c. magnetron sputtering technique

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