Influence of Multiple Layers on Chemical Bath Deposited Zno Thin Films

Shukla, Vipul J

doi:10.22214/ijraset.2018.3042

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…Pure ZnO thin films were synthesized by chemical bath deposition method following the same procedure as reported earlier [25]. Aqueous solutions of 0.1 M 20 ml copper chloride, 0.1 M 20 ml sodium chloride and 0.1 M 20 ml potassium chloride were added to 0.1 M 60 ml zinc chloride solution for the growth of copper doped ZnO (Cu:ZnO), sodium doped ZnO (Na:ZnO) and potassium doped ZnO (K:ZnO) respectively.…”

Section: Methodsmentioning

confidence: 99%

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Shukla¹,

Patel²

2020

Nanosystems: Phys. Chem. Math.

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Pure ZnO and copper (IB group), sodium (IA group) and potassium (IA group) and doped ZnO thin films on glass substrate by chemical bath deposition method have been studied for Hall effect measurements, resistivity, Raman and photoluminescence (PL). The influence of dopant content on carrier concentration, electrical resistivity, and Hall mobility of the thin films are analyzed. Electrical conductivity measurements of ZnO are carried out by two probe method and activation energy for the electrical conductivity of pure and doped ZnO is found out. The Raman scattering of the pure ZnO and doped ZnO shows the first and second orders of polar and non-polar modes. Raman spectra confirms the hexagonal wurtzite structure of pure and doped ZnO with E 2 (high) mode at 439 cm −1 and presence of other possible defects. Photoluminescence (PL) at room temperature results indicate the emission occurs at close band lines and the outcomes are identified with a few inherent imperfections in the doped ZnO thin films. The PL results demonstrate the upgraded optoelectronic properties, specifically, the carriers for long life span is executed by the oxygen opportunities. Raman spectroscopy and photoluminescence confirm existence of zinc interstitials (Zni) as well as oxygen vacancies (Vo). Resistivity as low as 15 Ω-cm, Hall mobility as high as 6.2 cm 2 /Vs and effective carrier concentration as high as 1.70×10 17 e − /cm 3 have been obtained.

show abstract

Section: Methodsmentioning

confidence: 99%

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Shukla¹,

Patel²

2020

Nanosystems: Phys. Chem. Math.

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show abstract

“…Pure ZnO thin films were synthesized by following the same procedure of chemical bath deposition as reported earlier [9]. Prior to adding drop wise ammonia solution in to 0.1 M 60 ml zinc chloride solution, we added 0.1 M 20 ml aqueous solutions of copper chloride, sodium chloride and potassium chloride for the growth of copper doped ZnO (Cu: ZnO), sodium doped ZnO (Na: ZnO) and potassium doped ZnO (K: ZnO) respectively.…”

Section: Experimental Details 21 Growth Of Thin Filmsmentioning

confidence: 99%

P-type Behaviour of Doped ZnO Thin Films Prepared by Chemical Bath Deposition

2022

Bulg.J.Phys.

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Pure as well as Cu, Na and K doped ZnO thin films were deposited on glass substrate using aqueous solution of ZnCl2 and NH3 by chemical bath deposition method and have been studied for their thermoelectric behaviour. In conventional semiconductors, by changing the doping concentration from 0.1M to 0.5M of pure ZnO (n-type) and Na, K (Group IA), Cu (Group IB) doped ZnO (p-type) thin films will reduce the Seebeck coefficient (thermoelectric power) and resulted in a higher power factor. Transport coefficient was calculated using the graph of thermoelectric power vs inverse of temperature. The sign of measured thermoelectric power shows that pure ZnO is n-type but all doped ZnO are p-type. It is found that ZnO is a nondegenerate from the graph of Peltier coefficient vs temperature. The values of slope of the Jonker plot (Seebeck coefficient versus logarithm of conductivity) are around kB/e (86.15 µV/K) for pure ZnO, and 0.1M to 0.5M K doped ZnO thin films; and lower than kB/e for 0.1M to 0.5M Cu doped, 0.1M to 0.5M Na doped ZnO thin films.

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Synthesis, optical, and photoluminescence properties of undoped and Cu-doped ZnO thin films by colloidal solution route

Shukla

Patel²

2020

Molecular Crystals and Liquid Crystals

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Influence of Multiple Layers on Chemical Bath Deposited Zno Thin Films

Cited by 3 publications

References 13 publications

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

P-type Behaviour of Doped ZnO Thin Films Prepared by Chemical Bath Deposition

Synthesis, optical, and photoluminescence properties of undoped and Cu-doped ZnO thin films by colloidal solution route

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