Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

Park, Noejung; Kim, Bum-Kyu; Lee, Jun Young; Kim, Ju‐Jin

doi:10.1063/1.3274039

Cited by 18 publications

(15 citation statements)

References 22 publications

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“…Moreover, it is assumed that the total voltage applied to the structure is less than 0.1 V; hence, the Fermilevel variation inside graphene is small. Due to the exclusion of the channel in the developed 1-D model, the asymmetry of conduction in the hole-and electron-dominated transport regimes in graphene-based field-effect transistors [17], [53], [54] is not modeled in this work.…”

Section: Metal-mlg Contact Structurementioning

confidence: 97%

“…Furthermore, it has been shown that the metal contacts can alter the Fermi level and the density of states of graphene [40]- [44], [53], [54], [84], which leads to a change in the sheet resistivity of graphene under metal. Therefore, the contact resistance, which is determined by the slope of the I-V curve near the Fermi level, becomes strongly dependent on the type of metal.…”

Section: Metal-mlg Contact Structurementioning

confidence: 99%

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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Khatami

et al. 2012

IEEE Trans. Electron Devices

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Parasitic components are becoming increasingly important with geometric scaling in nanoscale electronic devices and interconnects. The parasitic contact resistance between metal electrodes and multilayer graphene (MLG) is a key factor determining the performance of MLG-based structures in various applications. The available methods for characterizing metal-MLG contact interfaces rely on a model based on the top-contact structure, but it ignores the edge contacts that can greatly reduce the contact resistance. Therefore, in the present work, a rigorous theoretical 1-D model for metal-MLG contact is developed for the first time. The contribution of the major components of resistance-the top and edge contacts (side and end contacts) and the MLG sheet resistivity-to the total resistance of the structure is included in the model. The 1-D model is compared to a 3-D model of the system, and a method for investigation and optimization of the range of validity of the 1-D model is developed. The results of this work provide valuable insight to both the characterization and design of metal-MLG contacts.

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Section: Metal-mlg Contact Structurementioning

confidence: 97%

Section: Metal-mlg Contact Structurementioning

confidence: 99%

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Khatami

et al. 2012

IEEE Trans. Electron Devices

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“…Such an interface is characterized by weak bonding and charge transfer between the metal and graphene, which results in doping and a shift in the Fermi level from the Dirac point. For physisorption interfaces, the electronic structure of graphene remains essentially unperturbed, and hence, such contacts are ideal for probing the (magneto-) transport properties of pristine graphene [32,34,35]. "Chemisorption interface", on the other hand, is characterized by a strong chemical bond between graphene and metal (Co, Ni), with a concomitant modification of the electronic structure of pristine graphene, including elimination of the Dirac point, band gap opening and creation of metal-graphene hybrid localized states in the gap [30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

2013

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Current-perpendicular-to-plane (CPP) magnetoresistance (MR) effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG) is grown on a metallic substrate by chemical vapor deposition (CVD). We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100%) are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions

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“…SnCl 4 ·5H 2 O was dissolved in CH 3 OH at a final concentration of 0.3 M and 2‐nitrobenzaldehyde (NBAL) was introduced as a photosensitive additive. The dissolved photosensitive solution was stirred at room temperature for 3 h. Graphene sheets were micromechanically cleaved from highly oriented pyrolytic graphite 12. Graphene in the mixed solution were dispersed by a sonicator 13.…”

Section: Methodsmentioning

confidence: 99%

A study on the graphene incorporated direct‐patternable SnO₂ thin film

Kim

Yun

Park

2011

Physica Status Solidi (a)

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The electrical property of direct‐patternable SnO2 thin film was improved by the incorporation of graphene. Graphene were incorporated into SnO2 photosensitive solution and the direct‐patternable film was prepared by photochemical solution deposition. The incorporation of graphene into SnO2 films slightly reduced the transmittance of the films due to light scattering by the incorporated graphene. In addition, with incorporation of graphene, the crystallinity of the SnO2 thin films was decreased slightly and the resistivity was improved due to an enhancement of mobility because of the π‐bond nature of surface on graphene. Direct‐patterning of graphene incorporated SnO2 thin films was performed without photoresist or etching process. These results suggest that a micropatterned system can be simply fabricated at a low cost and the electrical properties of SnO2 films can be improved by incorporating graphene.

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Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

Abstract: Articles you may be interested inErratum: "Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications" [Appl. Phys. Lett. 100, 233506 (2012)

Cited by 18 publications

References 22 publications

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

A study on the graphene incorporated direct‐patternable SnO₂ thin film

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Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

Abstract: Articles you may be interested inErratum: "Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications" [Appl. Phys. Lett. 100, 233506 (2012)

Cited by 18 publications

References 22 publications

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

A study on the graphene incorporated direct‐patternable SnO2 thin film

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Product

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A study on the graphene incorporated direct‐patternable SnO₂ thin film