Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers

Łusakowski, J.; Karpierz, K.; Grynberg, M.; Karczewski, G.; Wójtowicz, T.; Contreras, Sylvie; Callen, Olivier

doi:10.12693/aphyspola.92.911

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…The possibility of observing the bolometric effect in [26] was connected with a small activation energy E of the conductivity in the samples investigated. The magnetoresistance measurements [14] showed that the hopping conductivity at liquid helium temperatures is characterized by E ≈ 1 meV, which means that even a very small increase of the lattice temperature can lead to observable conductivity changes.…”

Section: Discussionmentioning

confidence: 99%

“…A further decrease of d b to 0.5 μm (sample A) makes the resistance of the sample too high for carrying out Hall effect measurements, as it is also in the case of sample C. At liquid helium temperatures, samples A, B and C were insulating. Magnetotransport studies showed that hopping is the appropriate mechanism of conductivity at low temperatures for sample D [14]. This indicates that the In concentration was smaller than the one corresponding to the Mott transition.…”

Section: Samples and Experimentsmentioning

confidence: 96%

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Potential fluctuations in CdTe epitaxial layers studied by shallow donor spectroscopy in the far infrared

Karpierz

Łusakowski

Kossut

et al. 2008

J. Phys.: Condens. Matter

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Shallow donor far infrared spectroscopy was carried out on n-type CdTe thin layers grown by molecular beam epitaxy on semi-insulating GaAs substrates. Indium doped layers of 0.5 μm thickness were deposited on a nominally undoped CdTe buffer layer with the thickness between 0.5 and 7 μm. We show that (i) the layers investigated are unintentionally doped with a native donor of an unknown origin with the chemical shift different from that of In; (ii) the shape of the spectral lines shows that the CdTe part of a structure is composed of layers characterized by either a small or a large disorder; (iii) the main sources of the disorder are structural defects originating from the CdTe/GaAs interface and propagating into CdTe layers over a distance of about 4 μm.

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Section: Discussionmentioning

confidence: 99%

Section: Samples and Experimentsmentioning

confidence: 96%